NCE60R1K2Z PDF даташит
Спецификация NCE60R1K2Z изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET ��». |
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Детали детали
Номер произв | NCE60R1K2Z |
Описание | N-Channel Super Junction Power MOSFET �� |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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NCE60R1K2Z
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS@Tjmax
RDS(ON) MAX
ID
650
1200
4
V
mΩ
A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R1K2Z
TO-92
NCE60R1K2Z
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
TO-92
Value
600
±30
4
2.5
12
4
0.03
130
2
0.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE60R1K2Z
Parameter
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt,VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
Table 2. Thermal Characteristic
Parameter
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
Symbol
dv/dt
dv/dt
TJ,TSTG
Symbol
RthJC
RthJA
Value
50
15
-55...+150
Value
31
180
Unit
V/ns
V/ns
°C
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2A
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 2.5A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=480V,ID=4A,
VGS=10V
Qgd
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=2.5A,
RG=20Ω,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward On Voltage
VSD Tj=25°C,ISD=4A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=4A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min Typ
600
2.5 3
1000
4
280
26
2.3
6.5
1.3
2.5
2.5
6
3
48
8
1
150
0.85
11
Max
1
50
±100
3.5
1200
10
60
15
4
12
1.3
Unit
V
μA
μA
nA
V
mΩ
S
PF
PF
PF
nC
nC
nC
Ω
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE60R1K2Z
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
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