|
|
Datasheet NCEP01T13 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NCEP01T13 | N-Channel Super Trench Power MOSFET http://www.ncepower.com
Pb Free Product
NCEP01T13
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized d | NCE Power Semiconductor | mosfet |
2 | NCEP01T13D | N-Channel Super Trench Power MOSFET http://www.ncepower.com
Pb Free Product
NCEP01T13D
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized | NCE Power Semiconductor | mosfet |
NCE Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NCE-xxx | Crystal Clock Oscillator SaRonix oscillator | | |
2 | NCE0102Z | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0102Z
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
D G
General Features
● VDS = 100 NCE Power Semiconductor mosfet | | |
3 | NCE0106R | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0106R
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID NCE Power Semiconductor mosfet | | |
4 | NCE0106Z | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0106Z
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0106Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID NCE Power Semiconductor mosfet | | |
5 | NCE0108AS | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0108AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,I NCE Power Semiconductor mosfet | | |
6 | NCE0110AK | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0110AK
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,ID NCE Power Semiconductor mosfet | | |
7 | NCE0110AS | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0110AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,I NCE Power Semiconductor mosfet | |
Esta página es del resultado de búsqueda del NCEP01T13. Si pulsa el resultado de búsqueda de NCEP01T13 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |