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SBR1A40S3 PDF даташит

Спецификация SBR1A40S3 изготовлена ​​​​«Diodes» и имеет функцию, называемую «SUPER BARRIER RECTIFIER».

Детали детали

Номер произв SBR1A40S3
Описание SUPER BARRIER RECTIFIER
Производители Diodes
логотип Diodes логотип 

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SBR1A40S3 Даташит, Описание, Даташиты
Features
Low Forward Voltage Drop
Low Reverse Leakage
Excellent High Temperature Stability
Patented Super Barrier Rectifier Technology
Soft, fast switching capability
150ºC Operating Junction Temperature
Lead Free/RoHS Compliant (Note 1)
“Green” Device (Note 2)
SBR1A40S3
1A SBR®
SUPER BARRIER RECTIFIER
Mechanical Data
Case: SOD-323
Case Material: Molded Plastic, “Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.004 grams (approximate)
Top View
Ordering Information (Note 3)
Notes:
Part Number
SBR1A40S3-7
Case
SOD-323
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
D4 D4 = Product Type Marking Code
SBR is a registered trademark of Diodes Incorporated.
SBR1A40S3
Document number: DS31528 Rev. 2 - 2
1 of 4
www.diodes.com
November 2010
© Diodes Incorporated









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SBR1A40S3 Даташит, Описание, Даташиты
SBR1A40S3
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
TC = 65°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VRM
VR(RMS)
IO
IFSM
Value
40
28
1
20
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 4)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
RθJA
RθJA
TJ, TSTG
Value
473
407
-65 to +150
Unit
ºC/W
ºC
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage Drop
Leakage Current (Note 6)
Junction Capacitance
Symbol Min Typ Max
V(BR)R
40
-
-
VF - - 0.55
IR - 10 100
CJ - 55 -
Notes:
4. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Polymide PCB, 2 oz. Copper, minimum recommended pad layout pad layout per http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
Unit
V
V
µA
pF
Test Condition
IR = 100μA
IF = 1A, TJ = 25ºC
VR = 40V, TJ = 25ºC
VR = 4.0V, f = 1MHz
10,000
1,000
TA = 150°C
TA = 100°C
100
10
TA = -65°C
1
0.1
0
0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.1 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
SBR1A40S3
Document number: DS31528 Rev. 2 - 2
2 of 4
www.diodes.com
TA = 125°C
TA = 100°C
TA = 75°C
TA = 25°C
TA = -65°C
November 2010
© Diodes Incorporated









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SBR1A40S3 Даташит, Описание, Даташиты
SBR1A40S3
Package Outline Dimensions
C
H
B
A
M
K
L
SOD-323
Dim Min Max
A 0.25 0.35
B 1.20 1.40
C 2.30 2.70
H 1.60 1.80
J 0.00 0.10
K 1.0 1.1
L 0.20 0.40
M 0.10 0.15
α 0° 8°
J All Dimensions in mm
Suggested Pad Layout
C
X
YG
Z
Dimensions
Z
G
X
Y
C
Value (in mm)
3.75
1.05
0.65
1.35
2.40
SBR is a registered trademark of Diodes Incorporated.
SBR1A40S3
Document number: DS31528 Rev. 2 - 2
3 of 4
www.diodes.com
November 2010
© Diodes Incorporated










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