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Datasheet CJD127 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CJD127 | POWER DARLINGTON TRANSISTORS CJD122 NPN CJD127 PNP
SURFACE MOUNT SILICON COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed |  Central Semiconductor | transistor |
CJD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJD01N60 | N-Channel Power MOSFET, Transistor CJD01N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to  ZPSEMI mosfet | | |
| 2 | CJD01N65B | N-Channel Power MOSFET, Transistor CJD01N65B
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N65B N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. D ZPSEMI mosfet | | |
| 3 | CJD01N80 | N-Channel Power MOSFET, Transistor CJD01N80
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N80 N-Channel Power MOSFET
GENERAL DESCRIPTION The CJD01N80 is an N-channel mode power MOSFET using
advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior sw ZPSEMI mosfet | | |
| 4 | CJD02N60 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
4.4Ω@10V
ID
2A
TO-251S
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking c  JCET mosfet | | |
| 5 | CJD02N60 | N-Channel Power MOSFET, Transistor CJD02N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to ZPSEMI mosfet | | |
| 6 | CJD02N65 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N65
V(BR)DSS
650
N-Channel Power MOSFET
RDS(on)MAX
4.4Ω@10V
ID
2A
TO-251S
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch e JCET mosfet | | |
| 7 | CJD02N65 | N-Channel Power MOSFET, Transistor CJD02N65
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N65 N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. De ZPSEMI mosfet | |
| Esta página es del resultado de búsqueda del CJD127. Si pulsa el resultado de búsqueda de CJD127 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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