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HFP10N80 PDF даташит

Спецификация HFP10N80 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFP10N80
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFP10N80 Даташит, Описание, Даташиты
Dec 2010
HFP10N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ ȍ
ID = 9.4 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 58 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
9.4
5.9
36.0
ρͤ͑͡
920
9.4
19.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
195
1.56
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.64
--
62.5
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡









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HFP10N80 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ͑
VGS = 10 V, ID = 4.7 A͑
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 Ꮃ͑
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
VDS = 800 V, VGS = 0 V͑
VDS = 640 V, TC = 125ఁ͑
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 9.4 A,
RG = 25 ש͑
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 640V, ID = 9.4 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9.4 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.4 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.92 1.15
V
ש͑
-- -- V
0.99 -- ·͠ఁ͑
-- 1 Ꮃ͑
-- 10 Ꮃ͑
-- 100 Ꮂ͑
-- -100 Ꮂ͑
2800
230
20
3600
300
25
Ꮔ͑
Ꮔ͑
Ꮔ͑
60 120
150 300
120 240
120 240
58 75
17.5 --
22 --
Ꭸ͑
Ꭸ͑
Ꭸ͑
Ꭸ͑
Οʹ͑
Οʹ͑
Οʹ͑
-- 9.4
-- 36.0
-- 1.4
950 --
14.0 --
A
V
Ꭸ͑
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=17.3mH, IAS=10.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡









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HFP10N80 Даташит, Описание, Даташиты
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
䈜㻌㻺㼛㼠㼑㼟㻌㻦
ȝ V3XOVH7HVW
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
2.5
2.0
VGS = 10V
1.5 VGS = 20V
1.0
䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀J = 25
0.5
0 5 10 15 20 25 30
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss 䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VDS = 50V
ȝ V3XOVH7HVW
10-1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0V
ȝ V3XOVH7HVW
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
* Note : ID = 9.4A
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡










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