DataSheet26.com

HFP5N65U PDF даташит

Спецификация HFP5N65U изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFP5N65U
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

8 Pages
scroll

No Preview Available !

HFP5N65U Даташит, Описание, Даташиты
HFP5N65U
650V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 10.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
March 2013
BVDSS = 650 V
RDS(on) typ ȍ
ID = 4.5 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
4.5
2.8
18
ρ30
163
4.5
12.3
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
123
0.98
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.02
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΣΔΙ͑ͣͤ͑͢͡









No Preview Available !

HFP5N65U Даташит, Описание, Даташиты
Package Marking and Odering Information
Device Marking Week Marking
Package
Packing
HFP5N65U
YWWX
TO-220
Tube
HFP5N65U
YWWXg
TO-220
Tube
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 2.25 A
2.5
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125
VGS = ρ30 V, VDS = 0 V
650
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 4.5 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 520V, ID = 4.5 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 4.5 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
Typ Max Units
-- 4.5
2.3 2.9
V
Ÿ
-- -- V
0.6 -- V/
-- 1
-- 10
-- ρ100
600 780
60 78
7.7 10
22 44
40 80
45 90
35 70
10.5 13.5
3.5 --
3 --
nC
nC
nC
-- 4.5
-- 18
-- 1.4
243 --
1.5 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.8mH, IAS=4.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”4.5A, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΣΔΙ͑ͣͤ͑͢͡









No Preview Available !

HFP5N65U Даташит, Описание, Даташиты
Typical Characteristics
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
2. TC = 25oC
10-1
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
6
VGS = 10V
4
VGS = 20V
2
Note : TJ = 25oC
0
0 2 4 6 8 10
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
Ciss
400
200
0
10-1
Coss
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
Crss
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10
25oC
150oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC
25oC
0.1
0.0
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.2 0.4 0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 130V
10 VDS = 325V
VDS = 520V
8
6
4
2
Note : I = 4.5A
D
0
0 3 6 9 12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝;ΒΣΔΙ͑ͣͤ͑͢͡










Скачать PDF:

[ HFP5N65U.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HFP5N65FN-Channel MOSFETSemiHow
SemiHow
HFP5N65SN-Channel MOSFETSemiHow
SemiHow
HFP5N65UN-Channel MOSFETSemiHow
SemiHow

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск