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W978H6KB PDF даташит

Спецификация W978H6KB изготовлена ​​​​«Winbond» и имеет функцию, называемую «LPDDR2-S4B 256Mb».

Детали детали

Номер произв W978H6KB
Описание LPDDR2-S4B 256Mb
Производители Winbond
логотип Winbond логотип 

30 Pages
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W978H6KB Даташит, Описание, Даташиты
W978H6KB / W978H2KB
LPDDR2-S4B 256Mb
Table of Contents-
1. GENERAL DESCRIPTION ............................................................................................................................................ 6
2. FEATURES.................................................................................................................................................................... 6
3. ORDER INFORMATION ................................................................................................................................................ 7
4.
4.1
4.2
PIN CONFIGURATION .................................................................................................................................................. 8
134 Ball VFBGA............................................................................................................................................................. 8
168 Ball WFBGA............................................................................................................................................................ 9
5.
5.1
5.2
PIN DESCRIPTION ..................................................................................................................................................... 10
Basic Functionality ....................................................................................................................................................... 10
Addressing Table ......................................................................................................................................................... 11
6. BLOCK DIAGRAM ....................................................................................................................................................... 12
7. FUNCTIONAL DESCRIPTION..................................................................................................................................... 13
7.1 Simplified LPDDR2 State Diagram .............................................................................................................................. 13
7.1.1
Simplified LPDDR2 Bus Interface State Diagram......................................................................................................... 14
7.2 Power-up, Initialization, and Power-Off ........................................................................................................................ 15
7.2.1
Power Ramp and Device Initialization.......................................................................................................................... 15
7.2.2
Timing Parameters for Initialization.............................................................................................................................. 17
7.2.3
Power Ramp and Initialization Sequence .................................................................................................................... 17
7.2.4
Initialization after Reset (without Power ramp) ............................................................................................................. 18
7.2.5
Power-off Sequence.................................................................................................................................................... 18
7.2.6
Timing Parameters Power-Off ..................................................................................................................................... 18
7.2.7
Uncontrolled Power-Off Sequence .............................................................................................................................. 18
7.3 Mode Register Definition.............................................................................................................................................. 19
7.3.1
Mode Register Assignment and Definition ................................................................................................................... 19
7.3.1.1
Mode Register Assignment ............................................................................................................................... 19
7.3.2
MR0_Device Information (MA[7:0] = 00H) ................................................................................................................... 20
7.3.3
MR1_Device Feature 1 (MA[7:0] = 01H)...................................................................................................................... 20
7.3.3.1
Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC).............................................. 21
7.3.3.2
Non Wrap Restrictions ...................................................................................................................................... 21
7.3.4
MR2_Device Feature 2 (MA[7:0] = 02H)...................................................................................................................... 22
7.3.5
MR3_I/O Configuration 1 (MA[7:0] = 03H) ................................................................................................................... 22
7.3.6
MR4_Device Temperature (MA[7:0] = 04H)................................................................................................................. 22
7.3.7
MR5_Basic Configuration 1 (MA[7:0] = 05H) ............................................................................................................... 23
7.3.8
MR6_Basic Configuration 2 (MA[7:0] = 06H) ............................................................................................................... 23
7.3.9
MR7_Basic Configuration 3 (MA[7:0] = 07H) ............................................................................................................... 23
7.3.10
MR8_Basic Configuration 4 (MA[7:0] = 08H) ............................................................................................................... 23
7.3.11
MR9_Test Mode (MA[7:0] = 09H) ................................................................................................................................ 23
7.3.12
MR10_Calibration (MA[7:0] = 0AH) ............................................................................................................................. 24
7.3.13
MR16_PASR_Bank Mask (MA[7:0] = 10H).................................................................................................................. 24
7.3.14
MR32_DQ Calibration Pattern A (MA[7:0] = 20H) ........................................................................................................ 25
7.3.15
MR40_DQ Calibration Pattern B (MA[7:0] = 28H) ........................................................................................................ 25
7.3.16
MR63_Reset (MA[7:0] = 3FH): MRW only ................................................................................................................... 25
7.4 Command Definitions and Timing Diagrams................................................................................................................ 25
7.4.1
Activate Command ...................................................................................................................................................... 25
7.4.1.1
Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 25
7.4.1.2
Command Input Setup and Hold Timing............................................................................................................ 26
7.4.1.3
CKE Input Setup and Hold Timing .................................................................................................................... 26
7.4.2
Read and Write Access Modes.................................................................................................................................... 27
7.4.3
Burst Read Command ................................................................................................................................................. 27
7.4.3.1
Data Output (Read) Timing (tDQSCKmax)........................................................................................................ 27
7.4.3.2
Data Output (Read) Timing (tDQSCKmin)......................................................................................................... 28
7.4.3.3
Burst Read: RL = 5, BL = 4, tDQSCK > tCK...................................................................................................... 28
7.4.3.4
Burst Read: RL = 3, BL = 8, tDQSCK < tCK...................................................................................................... 29
Publication Release Date: May 22, 2014
Revision: A01-001
-1-









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W978H6KB Даташит, Описание, Даташиты
W978H6KB / W978H2KB
7.4.3.5
LPDDR2: tDQSCKDL Timing ............................................................................................................................ 29
7.4.3.6
7.4.3.7
7.4.3.8
LPDDR2: tDQSCKDM Timing ........................................................................................................................... 30
LPDDR2: tDQSCKDS Timing............................................................................................................................ 30
Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4............................................................................ 31
7.4.3.9
Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 31
7.4.4
Reads Interrupted by a Read....................................................................................................................................... 32
7.4.4.1
Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2................................................................................... 32
7.4.5
Burst Write Operation .................................................................................................................................................. 32
7.4.5.1
7.4.5.2
Data Input (Write) Timing .................................................................................................................................. 33
Burst Write: WL = 1, BL= 4 ............................................................................................................................... 33
7.4.5.3
Burst Wirte Followed by Burst Read: RL = 3, WL= 1, BL= 4.............................................................................. 34
7.4.5.4
Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 34
7.4.6
Writes Interrupted by a Write ....................................................................................................................................... 35
7.4.6.1
Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 35
7.4.7
7.4.7.1
7.4.7.2
Burst Terminate........................................................................................................................................................... 35
Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 36
Burst Read Truncated by BST: RL = 3, BL = 16................................................................................................ 36
7.4.8
Write Data Mask.......................................................................................................................................................... 37
7.4.8.1
Write Data Mask Timing.................................................................................................................................... 37
7.4.9
Precharge Operation ................................................................................................................................................... 38
7.4.9.1
Bank Selection for Precharge by Address Bits .................................................................................................. 38
7.4.10
Burst Read Operation Followed by Precharge ............................................................................................................. 38
7.4.10.1
7.4.10.2
Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 39
Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 39
7.4.11
Burst Write Followed by Precharge ............................................................................................................................. 40
7.4.11.1
Burst Write Follwed by Precharge: WL = 1, BL = 4............................................................................................ 40
7.4.12
Auto Precharge Operation ........................................................................................................................................... 41
7.4.13
Burst Read with Auto-Precharge ................................................................................................................................. 41
7.4.13.1
Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 41
7.4.14
Burst Write with Auto-Precharge.................................................................................................................................. 42
7.4.14.1
Burst Write with Auto-Precharge: WL = 1, BL = 4.............................................................................................. 42
7.4.14.2
Precharge & Auto Precharge Clarification ......................................................................................................... 43
7.4.15
Refresh Command ...................................................................................................................................................... 44
7.4.15.1
Command Scheduling Separations Related to Refresh..................................................................................... 44
7.4.16
LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 45
7.4.16.1
Definition of tSRF.............................................................................................................................................. 45
7.4.16.2
7.4.16.3
Regular, Distributed Refresh Pattern................................................................................................................. 46
Allowable Transition from Repetitive Burst Refresh........................................................................................... 47
7.4.16.4
NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 47
7.4.16.5
Recommended Self-Refresh Entry and Exit ...................................................................................................... 48
7.4.16.6
All Bank Refresh Operation............................................................................................................................... 48
7.4.17
Self Refresh Operation ................................................................................................................................................ 49
7.4.18
Partial Array Self-Refresh: Bank Masking.................................................................................................................... 50
7.4.19
Mode Register Read Command .................................................................................................................................. 51
7.4.19.1
Mode Register Read Timing Example: RL = 3, tMRR = 2.................................................................................. 51
7.4.19.2
Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 52
7.4.19.3
Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 52
7.4.20
Temperature Sensor.................................................................................................................................................... 53
7.4.20.1
Temperature Sensor Timing ............................................................................................................................. 54
7.4.20.2
7.4.20.3
DQ Calibration .................................................................................................................................................. 54
MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 55
7.4.21
Mode Register Write Command................................................................................................................................... 56
7.4.21.1
Mode Register Write Timing Example: RL = 3, tMRW = 5 ................................................................................. 56
7.4.21.2
Truth Table for Mode Register Read (MRR) and Mode Register Write (MRW).................................................. 56
7.4.22
Mode Register Write Reset (MRW Reset) ................................................................................................................... 57
7.4.23
Mode Register Write ZQ Calibration Command ........................................................................................................... 57
Publication Release Date: May 22, 2014
Revision: A01-001
-2-









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W978H6KB Даташит, Описание, Даташиты
W978H6KB / W978H2KB
7.4.23.1
ZQ Calibration Initialization Timing Example ..................................................................................................... 58
7.4.23.2
7.4.23.3
7.4.23.4
ZQ Calibration Short Timing Example ............................................................................................................... 58
ZQ Calibration Long Timing Example................................................................................................................ 59
ZQ Calibration Reset Timing Example .............................................................................................................. 59
7.4.23.5
ZQ External Resistor Value, Tolerance, and Capacitive Loading ...................................................................... 60
7.4.24
Power-Down................................................................................................................................................................ 60
7.4.24.1
Basic Power Down Entry and Exit Timing ......................................................................................................... 60
7.4.24.2
CKE Intensive Environment .............................................................................................................................. 61
7.4.24.3
7.4.24.4
Refresh to Refresh Timing with CKE Intensive Environment ............................................................................. 61
Read to Power-Down Entry............................................................................................................................... 62
7.4.24.5
Read with Auto Precharge to Power-Down Entry .............................................................................................. 62
7.4.24.6
Write to Power-Down Entry............................................................................................................................... 63
7.4.24.7
Write with Auto Precharge to Power-Down Entry .............................................................................................. 63
7.4.24.8
Refresh Command to Power-Down Entry.......................................................................................................... 64
7.4.24.9
7.4.24.10
7.4.24.11
Activate Command to Power-Down Entry ......................................................................................................... 64
Precharge/Precharge-All Command to Power-Down Entry ............................................................................... 64
Mode Register Read to Power-Down Entry....................................................................................................... 65
7.4.24.12
MRW Command to Power-Down Entry ............................................................................................................. 65
7.4.25
Deep Power-Down ...................................................................................................................................................... 65
7.4.25.1
Deep Power Down Entry and Exit Timing.......................................................................................................... 66
7.4.26
Input Clock Stop and Frequency Change .................................................................................................................... 66
7.4.27
No Operation Command.............................................................................................................................................. 67
7.5 Truth Tables................................................................................................................................................................. 67
7.5.1
Command Truth Table................................................................................................................................................. 68
7.5.2
CKE Truth Table.......................................................................................................................................................... 69
7.5.3
Current State Bank n - Command to Bank n Truth Table............................................................................................. 70
7.5.4
Current State Bank n - Command to Bank m Truth Table............................................................................................ 72
7.5.5
Data Mask Truth Table ................................................................................................................................................ 73
8. ELECTRICAL CHARACTERISTIC .............................................................................................................................. 74
8.1 Absolute Maximum DC Ratings ................................................................................................................................... 74
8.2 AC & DC Operating Conditions.................................................................................................................................... 74
8.2.1
Recommended DC Operating Conditions .................................................................................................................... 74
8.2.1.1
Recommended DC Operating Conditions ......................................................................................................... 74
8.2.2
Input Leakage Current................................................................................................................................................. 75
8.2.3
Operating Temperature Conditions.............................................................................................................................. 75
8.2.4
AC and DC Input Measurement Levels........................................................................................................................ 75
8.2.4.1
AC and DC Logic Input Levels for Single-Ended Signals................................................................................... 75
8.2.4.1.1
Single-Ended AC and DC Input Levels for CA and CS_n Inputs ....................................................................... 75
8.2.4.1.2
Single-Ended AC and DC Input Levels for CKE ................................................................................................ 76
8.2.4.1.3
8.2.4.2
Single-Ended AC and DC Input Levels for DQ and DM..................................................................................... 76
Vref Tolerances ................................................................................................................................................ 76
8.2.4.2.1
VRef(DC) Tolerance and VRef AC-Noise Limits................................................................................................ 77
8.2.4.3
Input Signal....................................................................................................................................................... 78
8.2.4.3.1
LPDDR2-800/1066 Input Signal ........................................................................................................................ 78
8.2.4.4
AC and DC Logic Input Levels for Differential Signals ....................................................................................... 79
8.2.4.4.1
Differential Signal Definition .............................................................................................................................. 79
8.2.4.4.2
8.2.4.5
Differential swing requirements for clock (CK_t - CK_c) and strobe (DQS_t - DQS_c) ...................................... 79
Single-Ended Requirements for Differential Signals .......................................................................................... 80
8.2.4.6
Differential Input Cross Point Voltage................................................................................................................ 81
8.2.4.7
Slew Rate Definitions for Single-Ended Input Signals ....................................................................................... 82
8.2.4.8
Slew Rate Definitions for Differential Input Signals............................................................................................ 82
8.2.5
AC and DC Output Measurement Levels ..................................................................................................................... 83
8.2.5.1
8.2.5.2
Single Ended AC and DC Output Levels ........................................................................................................... 83
Differential AC and DC Output Levels ............................................................................................................... 83
8.2.5.3
Single Ended Output Slew Rate........................................................................................................................ 83
Publication Release Date: May 22, 2014
Revision: A01-001
-3-










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