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SD6835 PDF даташит

Спецификация SD6835 изготовлена ​​​​«SL» и имеет функцию, называемую «CURRENT MODE PWM+PFM CONTROLLER».

Детали детали

Номер произв SD6835
Описание CURRENT MODE PWM+PFM CONTROLLER
Производители SL
логотип SL логотип 

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SD6835 Даташит, Описание, Даташиты
Silan
Microelectronics
SD6835_Datasheet
CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH
VOLTAGE MOSFET
DESCRIPTION
SD6835 is current mode PWM+PFM controller used for SMPS with
built-in high-voltage MOSFET and external sense resistor.
It features low standby power and low start current. In standby
mode, the circuit enters burst mode to reduce the standby power
dissipation.
The switch frequency is 25~67KHz decided by the load with jitter
frequency for low EMI.
Built-in peak current compensation circuit makes the limit peak
current stable even with different input AC voltage. Built-in limit
output power compensation circuit to balance the limit output power
under different AC voltage inputs. Built-in slope compensation
circuit to adapt to more transformer applications. Maximum peak
current compensation during power-on reduces pressure on
transformer to avoid saturation, the peak current compensation will
decrease for balance after power-on. Limit output current can be APPLICATIONS
adjusted through the resistor connected to CS.
It integrates various protections such as undervoltage lockout,
SMPS
overvoltage protection, overload protection, leading edge blanking
and thermal shutdown. The circuit will restart until normal if
protection occurs.
FEATURES
Energy Star 2.0 standard
Lower start-up current (4µA)
Various switching frequency following load for the high
efficiency
EMI Frequency jitter for low EMI
Overvoltage, overload and over temperature protections
External peak current sense resistor
* Limit output power compensation
Slope compensation
Undervoltage lockout
Built-in high voltage MOSFET
Auto restart mode
Peak current compensation
Maximum peak current compensation for initialization to
realize the soft start function.
Burst mode
Cycle by cycle current limit
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV: 0.4
2012.10.09
Page 1 of 9









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SD6835 Даташит, Описание, Даташиты
Silan
Microelectronics
SD6835_Datasheet
ORDERING INFORMATION
Part No.
SD6835
Package
DIP-8-300-2.54
Marking
SD6835
TYPICAL OUPUT POWER CAPABILITY
Part No.
SD6835
190~265V
Adapter
22W
Open
26W
BLOCK DIAGRAM
Material
Pb free
Packaging
Tube
85~265V
Adapter
20W
Open
24W
VCC
3
FB Reduced
frequency
control
GND
1
16V
8.5V
Internal
bias
Level shift
Over voltage, over current,
over load and over
temperature protection
Burst mode
control
FB
4
OSC
Frequency
jitter
Limit output power
compensation circuit
Slope voltage
S
Q
R
CS
6
Drain
7
8
COMP
Leading
edge
blanking
Control
driver
Peak current
compensation
Slope
compensation
circuit
Slope voltage
2 CS
ABSOLUTE MAXIMUM RATING
Characteristics
Drain-Gate Voltage (RGS=1M)
Gate-Source (GND) Voltage
Drain Current Pulse note1
Continuous Drain Current (Tamb=25°C)
Signal Pulse Avalanche Energynote2
Power Supply Voltage
Feedback input voltage
Peak current sense voltage
Allowable Power Dissipation
Ambient thermal resistance
Surface thermal resistance
Operating Junction Temperature
Operating Temperature Range
Symbol
VDGR
VGS
IDM
ID
EAS
VCC,MAX
VFB
VCS
PD
θja
θjc
TJ
TORG
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Rating
650
±30
20
7.0
350
28
-0.3~7
-0.3~2
6.3
77
20
+150
-25~+85
Unit
V
V
A
A
mJ
V
V
V
W
°C/W
°C/W
°C
°C
REV: 0.4
2012.10.09
Page 2 of 9









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SD6835 Даташит, Описание, Даташиты
Silan
Microelectronics
SD6835_Datasheet
Characteristics
Symbol
Storage Temperature Range
TSTG
Note: 1. Pulse width is limited by maximum junction temperature;
2. L=51mH, TJ=25°C(start).
Rating
-55~+150
ELECTRICAL CHARACTERISTICS (for MOSFET, unless otherwise specified, Tamb=25°C)
Characteristics
Drain-Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Static Drain-Source
On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Symbol
Test conditions
BVDSS VGS=0V, ID=50µA
VDS=650V, VGS=0V
IDSS
VDS=480V, VGS=0V Tamb=125°C
RDS(ON) VGS=10V, ID=3A
CISS
COSS
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=25V, f=1MHz
CRSS VGS=0V, VDS=25V, f=1MHz
TD(ON)
TR
TD(OFF)
TF
VDD=0.5BVDSS , ID=25mA
VDD=0.5BVDSS , ID=25mA
VDD=0.5BVDSS , ID=25mA
VDD=0.5BVDSS , ID=25mA
Min. Typ. Max.
650 --
--
-- -- 50
-- -- 200
1.1 1.6 2.1
520 700 950
50 86 120
1.8 3.5 6.5
13 20 26
37 51 68
26 37 50
21 32 44
ELECTRICAL CHARACTERISTICS (unless otherwise specified, VCC=12V, Tamb=25°C)
Characteristics
Undervoltage Section
Start Threshold Voltage
Stop Threshold Voltage
Oscillator Section
Max. Oscillate Frequency
Min. Oscillate Frequency
Frequency jitter
Frequency Change
With Temperature
Maximum Duty cycle
Feedback Section
MAX. Feedback
Source Current
Shutdown Feedback
Voltage
(over load protection)
Symbol
Test conditions
Min.
VSTART
VSTOP
14.5
7.5
fOSCMAX VFB=3V
61
fOSCMIN VBURL<VFB<VBURH
20
Oscillate frequency is the
fMOD
±1.5
maximum
-- 25°C≤Tamb≤+85°C
--
DMAX
72
IFBMAX VFB=0V
0.25
VSD 3.8
Typ.
16
8.5
67
25
±2.5
±5
77
0.35
4.3
Max.
17
9.5
73
30
±3.5
±10
82
0.45
4.8
Unit
°C
Unit
V
µA
µA
pF
pF
pF
ns
ns
ns
ns
Unit
V
V
KHz
KHz
KHz
%
%
mA
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV: 0.4
2012.10.09
Page 3 of 9










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