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PDF BCR16CM-12LC Data sheet ( Hoja de datos )
| Número de pieza | BCR16CM-12LC | |
| Descripción | Triac | |
| Fabricantes | Renesas | |
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BCR16CM-12LC
600V - 16A - Triac
Medium Power Use
Preliminary Datasheet
R07DS1031EJ0200
(Previous: REJ03G1804-0100)
Rev.2.00
Feb 25, 2013
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGT I, IRGT I, IRGT III :50 mA
Outline
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
123
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
123
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
700
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
Ratings
Unit
Conditions
IT (RMS)
16
A Commercial frequency, sine full wave
360conduction, Tc = 110 C
ITSM 96 A 60 Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t 38 A2s Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
PGM
5W
PG (AV)
0.5
W
VGM 10 V
IGM 2 A
Tj
–40 to +150
C
Tstg
–40 to +150
C
— 2.1 g Typical value
R07DS1031EJ0200 Rev.2.00
Feb 25, 2013
Page 1 of 7
1 page  
BCR16CM-12LC
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140 Tj = 125°C
120
III Quadrant
100
80
60 I Quadrant
40
20
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj = 125°C)
7
5 Main Voltage
(dv/dt)c
3
Main Current
IT
2τ
Time
VD
(di/dt)c
Time
III Quadrant
101
7 I Quadrant
5
Minimum
Characteristics
3 Value
2 Typical Example
Tj = 125°C, IT = 4 A
100
τ = 500 μs, VD = 200 V
f = 3 Hz
7100 2 3 5 7 101 2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
IRGT III
Typical Example
5 IRGT I
3
2 IFGT I
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (μs)
Preliminary
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 150°C)
160
Typical Example
140 Tj = 150°C
120
III Quadrant
100
80
60
I Quadrant
40
20
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj = 150°C)
7
5 Typical Example Main Voltage
Time
Tj = 150°C
(dv/dt)c
VD
3 IT = 4 A
2 τ = 500 μs
VD = 200 V
Main Current
IT
(di/dt)c
τ Time
101 f = 3 Hz
III Quadrant
7 I Quadrant
5
3
2
100
7100
23
5 7 101
2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
6V A
V 330 Ω
Test Procedure I
6Ω
6V A
V 330 Ω
Test Procedure II
6V A
V 330 Ω
Test Procedure III
R07DS1031EJ0200 Rev.2.00
Feb 25, 2013
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BCR16CM-12LC.PDF ] | |
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