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S-LN4812LT1G PDF даташит

Спецификация S-LN4812LT1G изготовлена ​​​​«LRC» и имеет функцию, называемую «N-Channel Enhancement-Mode MOSFET».

Детали детали

Номер произв S-LN4812LT1G
Описание N-Channel Enhancement-Mode MOSFET
Производители LRC
логотип LRC логотип 

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S-LN4812LT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@6 A = 38m
RDS(ON), Vgs@4.5V, Ids@5A = 52m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current Handling Capability
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Ordering Information
Device
LN4812LT1G
S-LN4812LT1G
LN4812LT3G
S-LN4812LT3G
Marking
N48
N48
Shipping
3000/Tape&Reel
10000/Tape&Reel
LN4812LT1G
S-LN4812LT1G
3
1
2
SOT– 23 (TO–236AB)
N - Channel
3
1
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1)
PD Maximum Power Dissipation
TA = 25oC
TA = 75oC
30
± 20
6
30
1.4
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
RθJC Junction-to-Case Thermal Resistance
RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
-55 to 150
50
90
Unit
V
A
W
oC
oC/W
Rev .O 1/4









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S-LN4812LT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
ELECTRICAL CHARACTERISTICS
Symbol Parameter
Static
BVDSS Drain-Source Breakdown Voltage
RDS(on) Drain-Source On-State Resistance
RDS(on) Drain-Source On-State Resistance
VGS(th) Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate Body Leakage
gfs Forward Transconductance
Dynamic3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Source-Drain Diode
IS Max. Diode Forward Current
VSD Diode Forward Voltage
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Test Condition
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 6A
VDS =VGS, ID = 250uA
VDS = 24V, VGS = 0V
VGS = ± 20V, VDS = 0V
VDS = 5V, ID = 6.9A
VDS = 15V, ID = 8.5A
VGS = 10V
VDD = 15V, RL = 15
ID = 1A, VGEN = 10V
RG = 6
VDS = 15V, VGS = 0V
f = 1.0 MHz
IS = 1A, VGS = 0V
Min Typ Max Unit
30 V
35.0 52.0
mΩ
22.0 38.0
1 1.5 3
V
1 uA
+ 100
nA
15.4 S
13 20
4.2
3.1
9
14
30
5
610
100
77
nC
ns
pF
3A
1.3 V
Rev .O 2/4









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S-LN4812LT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Vgs, GATE-TO-SOURCE VOLTAGE(V)
Figure 1. Transfer Characteristics
Vds,DRAIN-TO-SOURCE VOLTAGE(V)
Figure 2. On–Region Characteristics
Id-Drain Current(A)
Figure 3. On–Resistance versus Drain Current
0.5
0.4
0.3
0.2 Id=5A
0.1
0
3 3.2 3.4 3.6 3.8 4
Vgs-Gate-to-Source Voltage(V)
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/4










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Номер в каталогеОписаниеПроизводители
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