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S-LP3415ELT1G PDF даташит

Спецификация S-LP3415ELT1G изготовлена ​​​​«LRC» и имеет функцию, называемую «P-Channel Enhancement-Mode MOSFET».

Детали детали

Номер произв S-LP3415ELT1G
Описание P-Channel Enhancement-Mode MOSFET
Производители LRC
логотип LRC логотип 

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S-LP3415ELT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V
RDS(ON), [email protected], Ids@-4A = 60 mΩ
RDS(ON), [email protected], Ids@-4A = 75 mΩ
RDS(ON), [email protected], Ids@-2A = 85 mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
we declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Ordering Information
Device
LP3415ELT1G
S-LP3415ELT1G
LP3415ELT3G
S-LP3415ELT3G
Marking
P15
P15
Shipping
3000/Tape& Reel
10000/Tape& Reel
LP3415ELT1G
S-LP3415ELT1G
3
1
2
SOT– 23 (TO–236AB)
3
1
2
Maximum Ratings and Thermal Characteristics (TA= 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
TA = 25oC
TA = 75oC
IDM
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
RqJC
RqJA
Limit
-20
±8
-4
-30
1
0.6
-55 to 150
100
150
Unit
V
A
W
oC
oC/W
Rev .O 1/3









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S-LP3415ELT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Dynamic3)
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Rg
VGS = 0V, ID = -250uA
VGS = -1.8V, ID = -2A
VGS = -2.5V, ID = -4A
VGS = -4.5V, ID = -4A
VDS =VGS, ID = -250uA
VDS = -16V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS = 0V, f = 1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS =-10V, ID = -4A
VGS = -4.5V
VDD = -10V, RL = 2.5
ID = -1A, VGEN = -4.5V
RG = 3
VDS = -10V, VGS = 0V
f = 1.0 MHz
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = -1A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
3. Guaranteed by design; not subject to production testing
Min Typ Max Unit
-20 V
85.0
75.0 mΩ
60.0
-0.3 -1 V
-1 uA
±10 uA
6.5 Ω
4.59
2.14
2.51
965.2
1604
7716
3452
36.45
128.57
15.17
5.97
2.78
3.26
1930.4
3208
15432
6904
nC
ns
pF
-2.2 A
-1 V
Rev .O 2/3









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S-LP3415ELT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LP3415ELT1G , S-LP3415ELT1G
A
L
3
BS
12
VG
C
D
H
K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
Rev .O 3/3










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