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Datasheet H5N5005PL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | H5N5005PL | Silicon N-Channel MOS FET H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: RDS(on) = 0.070 Ω typ. • Low leakage current: IDSS = 10 µA max (at VDS = 500 V) • High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω) • Low gate charge: Qg = 300 nC ty | Renesas | data |
2 | H5N5005PL | Silicon N-Channel MOSFET H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1382 (Z) Target Specification 1st. Edition Mar. 2001 Features
• • • • • •
Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VG | Hitachi | mosfet |
H5N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | H5N1503P | Silicon N Channel MOS FET High Speed Power Switching
H5N1503P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0186-0100Z Rev.1.00 Mar.10.2004
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta Renesas Technology data | | |
2 | H5N1506P | Silicon N Channel MOS FET High Speed Power Switching H5N1506P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0389-0200 Rev.2.00 Jul 03, 2006
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3 Renesas Technology data | | |
3 | H5N2001LD | Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1 Renesas Technology data | | |
4 | H5N2001LM | Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1 Renesas Technology data | | |
5 | H5N2001LS | Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1 Renesas Technology data | | |
6 | H5N2003P | Silicon N Channel MOS FET High Speed Power Switching H5N2003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0235-0100Z Rev.1.00 Apr.09.2004
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta Renesas Technology data | | |
7 | H5N2004DL | Silicon N Channel MOS FET High Speed Power Switching H5N2004DL, H5N2004DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005
Features
• Low
• Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching Renesas Technology data | |
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