HAF2017 PDF даташит
Спецификация HAF2017 изготовлена «Renesas» и имеет функцию, называемую «Silicon N-Channel Power MOS FET». |
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Детали детали
Номер произв | HAF2017 |
Описание | Silicon N-Channel Power MOS FET |
Производители | Renesas |
логотип |
9 Pages
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HAF2017(L), HAF2017(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G0234-0200Z
(Previous ADE-208-1637 (Z))
Rev.2.00
Apr.13.2004
Descriptions
This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in
over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
G Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
LDPAK(L)
4
LDPAK(S)-1
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Apr.13.2004, page 1 of 8
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HAF2017(L), HAF2017(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. Value at Tch = 25°C
Symbol
VDSS
VGSS
VGSS
ID
ID (pulse) Note1
IDR
PchNote2
Tch
Tstg
Rating
60
16
–2.5
20
40
20
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Input voltage
Input current (Gate non shut down)
Input current (Gate non shut down)
Input current (Gate non shut down)
Input current (Gate shut down)
Input current (Gate shut down)
Shutdown temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
VOP
Min
3.5
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.8
0.35
175
—
Max
—
1.2
100
50
1
—
—
—
12
Unit
V
V
µA
µA
µA
mA
mA
°C
V
(Ta = 25°C)
Test Conditions
Vi = 8V, VDS =0
Vi = 3.5V, VDS =0
Vi = 1.2V, VDS =0
Vi = 8V, VDS =0
Vi = 3.5V, VDS =0
Channel temperature
Rev.2.00, Apr.13.2004, page 2 of 8
No Preview Available ! |
HAF2017(L), HAF2017(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Darin current
Darin current
Drain to source breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
ID1
ID2
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
RDS(on)
RDS(on)
Coss
td(on)
tr
td(off)
1
—
60
16
–2.5
—
—
—
—
—
—
—
1.4
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
21
35
27
460
8.7
44.6
2
—
10
—
—
—
100
50
1
–100
—
—
10
2.6
—
53
43
―
―
—
―
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
S
mΩ
mΩ
pF
µs
µs
µs
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS =0
IG = 800 µA, VDS =0
IG = –100 µA, VDS =0
VGS = 8 V, VDS =0
VGS = 3.5 V, VDS =0
VGS = 1.2 V, VDS =0
VGS = –2.4 V, VDS =0
VGS = 8 V, VDS =0
VGS = 3.5 V, VDS =0
VDS = 60 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID =10 A, VDS =10 VNote3
ID = 10 A, VGS = 4.5 VNote3
ID = 10 A, VGS = 10 VNote3
VDS = 10 V, VGS =0, f = 1 MHz
VGS = 5 V, ID= 10 A, RL = 3 Ω
Fall time
tf — 2.6 — µs
Body-drain diode forward voltage VDF
Body-drain diode reverse recovery trr
time
— 0.9 — V
IF = 20A, VGS = 0
— 120 — ns IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
Over load shut down operation
timeNote4
Notes: 3. Pulse test
tos1
tos2
— 0.97 — ms VGS = 5 V, VDD = 16 V
— 0.57 — ms VGS = 5 V, VDD = 24 V
4. Include the time shift based on increasing of channel temperature when operate under over load condition.
Rev.2.00, Apr.13.2004, page 3 of 8
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