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S1B PDF даташит

Спецификация S1B изготовлена ​​​​«Vishay» и имеет функцию, называемую «Surface Mount Glass Passivated Rectifier».

Детали детали

Номер произв S1B
Описание Surface Mount Glass Passivated Rectifier
Производители Vishay
логотип Vishay логотип 

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S1B Даташит, Описание, Даташиты
www.vishay.com
S1A thru S1M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
IR
VF
TJ max.
1.0 A
50 V to 1000 V
40 A, 30 A
5 mJ
1.0 μA, 5.0 μA
1.1 V
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Device marking code
SA SB SD SG SJ SK SM
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0 A
40 30 A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
Operating junction and storage temperature range
EAS
TJ, TSTG
5
- 55 to + 150
mJ
°C
Revision: 11-Dec-12
1 Document Number: 88711
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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S1B Даташит, Описание, Даташиты
www.vishay.com
S1A thru S1M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.1 V
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
TA = 25 °C
TA = 125 °C
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
4.0 V, 1 MHz
IR
trr
CJ
1.0
50
1.8
12
5.0
μA
μs
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Typical thermal resistance (1)
RJA
RJL
75
27
85
°C/W
30
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
S1J-E3/61T
0.064
61T
S1J-E3/5AT
S1JHE3/61T (1)
S1JHE3/5AT (1)
S1JHE3_A/H (1)
S1JHE3_A/I (1)
0.064
0.064
0.064
0.064
0.064
5AT
61T
5AT
H
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1800
7500
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
Resistive or Inductive Load
1.0
0.8
S1A thru S1J
0.6
S1K, S1M
0.4
0.2
0.2" x 0.2" (5.0 mm x 5.0 mm)
Thick Copper Pad Areas
0
0 20 40 60 80 100 120 140 160
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
TL = 110 °C
8.3 ms Single Half Sine-Wave
S1A thru S1J
10
S1K, S1M
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 11-Dec-12
2 Document Number: 88711
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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S1B Даташит, Описание, Даташиты
www.vishay.com
S1A thru S1M
Vishay General Semiconductor
100
TJ = 25 °C
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1 10
0.1 Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.8 1.2 1.6
Instantaneous Forward Voltage (V)
2.0
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.01
0.1 1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
10 1000
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
S1K, S1M
100
10
1
0.01
S1A thru S1J
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 11-Dec-12
3 Document Number: 88711
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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