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SBL25L20CT PDF даташит

Спецификация SBL25L20CT изготовлена ​​​​«Vishay» и имеет функцию, называемую «Common Cathode Schottky Rectifier».

Детали детали

Номер произв SBL25L20CT
Описание Common Cathode Schottky Rectifier
Производители Vishay
логотип Vishay логотип 

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SBL25L20CT Даташит, Описание, Даташиты
www.vishay.com
SBL25LxxCT, SBLF25LxxCT, SBLB25LxxCT
Vishay General Semiconductor
Dual Low VF Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
SBL25LxxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
SBLF25LxxCT
PIN 1
PIN 2
PIN 3
FEATURES
• Power pack
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
1
SBLB25LxxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2 x 12.5 A
20 V to 30 V
180 A
0.39 V
150 °C
TO-220AB, ITO-220AB, TO-263AB
Diode variations
Common cathode
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters, switching
mode power supplies, freewheeling diodes, OR-ing diodes,
DC/DC converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
at TC = 95 °C
total device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
TJ, TSTG
VAC
SBL25L20CT
20
SBL25L25CT
25
25
12.5
SBL25L30CT
30
180
- 55 to + 150
1500
UNIT
V
A
°C
V
Revision: 12-Jun-13
1 Document Number: 88731
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

SBL25L20CT Даташит, Описание, Даташиты
www.vishay.com
SBL25LxxCT, SBLF25LxxCT, SBLB25LxxCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage
Maximum instantaneous reverse current at DC blocking
voltage per diode
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VF (1)
IR (2)
12.5 A
Rated VR
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
TJ = 125 °C
VALUE
0.39
0.49
0.90
50
100
UNIT
V
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL
Typical thermal resistance from junction to case per diode
RJC
1.5
SBLF
4.0
SBLB
1.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
ITO-220AB
SBL25L20CT-E3/45
SBLF25L20CT-E3/45
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
SBLB25L20CT-E3/45
SBLB25L20CT-E3/81
SBL25L20CTHE3/45 (1)
SBLF25L20CTHE3/45 (1)
SBLB25L20CTHE3/45 (1)
SBLB25L20CTHE3/81 (1)
Note
(1) AEC-Q101 qualified
UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
1.85
45
50/tube
Tube
1.99
45
50/tube
Tube
1.35
45
50/tube
Tube
1.35
81
800/reel
Tape and reel
1.85
45
50/tube
Tube
1.99
45
50/tube
Tube
1.35
45
50/tube
Tube
1.35
81
800/reel
Tape and reel
Revision: 12-Jun-13
2 Document Number: 88731
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

SBL25L20CT Даташит, Описание, Даташиты
www.vishay.com
SBL25LxxCT, SBLF25LxxCT, SBLB25LxxCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
30
Resistive or Inductive Load
25
TJ = 150 °C
20
15
10
5
0
0 50 100 150
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
0.1 TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
300
TJ = TJ Max.
250 8.3 ms Single Half Sine-Wave
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TJ = 150 °C
10 TJ = 125 °C
TJ = 100 °C
1
0.1 TJ = 25 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1
10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
0.1
0.01
0.1
1
10 100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 12-Jun-13
3 Document Number: 88731
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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