HAT2096H PDF даташит
Спецификация HAT2096H изготовлена «Renesas» и имеет функцию, называемую «Silicon N-Channel Power MOSFET Power Switching». |
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Детали детали
Номер произв | HAT2096H |
Описание | Silicon N-Channel Power MOSFET Power Switching |
Производители | Renesas |
логотип |
7 Pages
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HAT2096H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS (on) = 4.2 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1234
4
G
5
D
S SS
1 23
REJ03G1186-0400
(Previous: ADE-208-1431B)
Rev.4.00
Sep 07, 2005
1, 2, 3
4
5
Source
Gate
Drain
Rev.4.00 Sep 07, 2005 page 1 of 6
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HAT2096H
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Value
30
±20
40
160
40
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
30
—
—
V (BR) GSS ±20
—
—
IGSS — — ±10
IDSS
——
1
VGS (off) 1.0 — 2.5
RDS (on) — 4.2 5.3
RDS (on) — 7.0 10
|yfs| 30 50 —
Ciss — 2200 —
Coss
— 600 —
Crss
— 330 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 30 V, VGS = 0
V VDS = 10 V, ID = 1 mA
mΩ ID = 20 A, VGS = 10 V Note 3
mΩ ID = 20 A, VGS = 4.5 V Note 3
S ID = 20 A, VDS = 10 V Note 3
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
Qg
Qgs
Qgd
— 40 — nC VDD = 10 V
— 7 — nC VGS = 10 V
— 8 — nC ID = 40 A
td (on)
tr
td (off)
tf
VDF
trr
— 20 — ns VGS = 10 V, ID = 20 A
— 49 — ns VDD ≅ 10 V
— 62 — ns RL = 0.5 Ω
— 15 — ns Rg = 4.7 Ω
— 0.85 1.11 V IF = 40 A, VGS = 0 Note 3
— 60 — ns IF = 40 A, VGS = 0
diF/dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 6
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HAT2096H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50 10 V
4.5 V
40
3.5 V
Pulse Test
30
3V
20
10
VGS = 2.5 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
0.04 ID = 10 A
5A
2A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
100
10
DC
100
OPpWera=ti1o0n1mmss
10
µs
µs
Operation in
1 this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
012 34 5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10 VGS = 4.5 V
5
10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
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Номер в каталоге | Описание | Производители |
HAT2096H | Silicon N Channel Power MOS FET | Hitachi |
HAT2096H | Silicon N-Channel Power MOSFET Power Switching | Renesas |
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