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BD135 PDF даташит

Спецификация BD135 изготовлена ​​​​«CDIL» и имеет функцию, называемую «NPN EPITAXIAL SILICON POWER TRANSISTORS».

Детали детали

Номер произв BD135
Описание NPN EPITAXIAL SILICON POWER TRANSISTORS
Производители CDIL
логотип CDIL логотип 

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BD135 Даташит, Описание, Даташиты
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTORS
BD135 BD137
BD139
TO126
Plastic Package
ECB
Designed for use as Audio Amplifier and Drivers Utilizing
Complementary BD136, BD138, BD140
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage (RBE=1k)
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation @ Ta=25ºC
Derate above 25ºC
Power Dissipation @ Tc=25ºC
Derate above 25ºC
Power Dissipation @ Tc=70ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
ICM
IB
PD
PD
PD
Tj, Tstg
BD135
45
45
45
BD137
60
60
60
5.0
1.5
2.0
0.5
1.25
10
12.5
100
8.0
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
100
10
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
*VCEO (sus)
IC=30mA, IB=0
BD135
BD137
BD139
Collector Cut off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0,
Tc=125ºC
Emitter Cut off Current
IEBO
VEB=5V, IC=0
DC Current Gain
*hFE IC=0.005A, VCE=2V
IC=0.15A, VCE=2V
IC=0.5A, VCE=2V
*Pulse test:- Pulse width=300µs, duty cycle=2%
MIN
45
60
80
25
40
25
BD139
80
100
100
UNIT
V
V
V
V
A
A
A
W
mW/ºC
W
mW/ºC
W
ºC
ºC/W
ºC/W
MAX UNIT
V
V
V
0.1 µA
10 µA
10 µA
250
Continental Device India Limited
Data Sheet
Page 1 of 4









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BD135 Даташит, Описание, Даташиты
NPN EPITAXIAL SILICON POWER TRANSISTORS
ECB
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
*hFE Group
IC=0.15A, VCE=2V
-6
- 10
- 16
- 25
Collector Emitter Saturation Voltage
*VCE (sat)
IC=0.5A, IB=0.05A
Base Emitter On Voltage
*VBE(on)
*IC=0.5A, VCE=2V
*Pulse test:- Pulse width=300µs, duty cycle=2%
BD135 BD137
BD139
TO126
Plastic Package
MIN MAX UNIT
40 100
63 160
100 250
160 400
0.5 V
1.0 V
Continental Device India Limited
Data Sheet
Page 2 of 4









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BD135 Даташит, Описание, Даташиты
BD135 BD137
BD139
TO126
Plastic Package
TO-126
Leaded Plastic
Package
A
1 23
C
D
F
TO-126 Series Packaging Tube
3.7
0.65
Ø3.10 ±0.05 Thru (2 Nos)
DIM Min Max
A 7.12 8.38
B 10.16 11.43
C 2.29 3.04
D 0.64 0.88
E 2.040 2.285
F 0.39 0.63
DIM Min Max
G 4.07 5.08
L 15.00 16.63
M 0.89 1.65
N 3.31 4.44
P 2.54 3.30
S
— 2.54
Pin Configurations
Pin 1: Emitter Pin 2: Collector Pin 3: Base
532.0 ±0.5
1.2
1.0
Ø5.9 ±0.1 Thru (2 Nos)
Qty: 50 Pcs/Tube
BD675_683 Rev_2 101002E
Continental Device India Limited
Data Sheet
Page 3 of 4










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