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1.5CE6.8CA даташитФункция этой детали – «Uni-directional And Bi-directional SilICon Transient Voltage Suppressors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
1.5CE6.8CA | Central Semiconductor |
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi-Directional) Series types are Transient Voltage Suppressors designed to protect voltage sensitive components from high voltage transients.
THIS DEVICE IS MANUFACTURED WITH A GLASS PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
DO-201 CASE
Note: For |
Это результат поиска, начинающийся с "1.5CE6.8CA", "1.5CE6." |
Номер в каталоге | Производители | Описание | |
1.5CE6.8A | Central Semiconductor |
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi- |
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2SA1568 | Sanken electric |
Silicon PNP Epitaxial Planar Transistor(DC Motor Driver/ Chopper Regulator and General Purpose) Built-in Diode at C–E Low VCE (sat)
2SA1568
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB Conditions VCB=–60V VEB=–6V IC=–25mA VCE=–1V, IC=–6A IC=–6A, IB=–0.3A IECO=–10A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz (Ta=25°C) 2SA1568 |
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2SB1568 | ROHM Semiconductor |
Power Transistor ( 80V/4A) 2SB1568
Transistors
Power Transistor (−80V, −4A)
2SB1568
z Features 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Built in resistors between base and emitter 5) Two millimeters lower than TO-220 |
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2SB1568 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1568
DESCRIPTION ·With TO-220F package ·Complement to type 2SD2399 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier application |
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2SB1568 | New Jersey Semiconductor |
Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-220FN |
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2SC1568 | Panasonic Semiconductor |
Silicon NPN epitaxial planar type Power Transistors
2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification Complementary to 2SA0900
φ 3.16±0.1 8.0+0.5 –0.1
Unit: mm
3.2±0.2
3.8±0.3
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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