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1N4006 даташит

Функция этой детали – «SilICon Rectifier».



The 1N4006 has a maximum voltage rating of 800V and a maximum current rating of 1A. Its forward voltage drop is around 0.7V, which is typical of rectifier diodes. The 1N4006 is suitable for use in low to medium voltage applications, including power supplies, battery chargers, and other electronic circuits that require voltage rectification.

one of the main disadvantages of the 1N4006 is its relatively slow switching speed. Compared to other diodes like the 1N4148, which has a very fast switching speed, the 1N4006 is relatively slow. This makes it unsuitable for use in high-speed switching applications.

Learn about the switching diode 1N4148.

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Номер в каталоге Производители Описание PDF
1N4006 Zowie Technology Corporation
Zowie Technology Corporation
  SILICON RECTIFIER

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1N4006 Zowie Technology
Zowie Technology
  (1N4001 - 1N4007) SILICON RECTIFIER

1N4001 THRU 1N4007 SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere DO-204AL FEATURES * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Construction utillizes void-free molded plastic technique * Low reverse leakage * High forward surge current capability * High temperature soldering guaranteed : 260oC / 10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 0.107(2.7) 0.080(2.0) DIA. 0.205(5.2) 0.160(4.1) 1.0(25.4)
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1N4006 Won-Top Electronics
Won-Top Electronics
  Diode, 1A, 800V, IN4006, SILICON RECTIFIER

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1N4006 Won-Top Electronics
Won-Top Electronics
  (1N4001 - 1N4007) 1.0A SILICON RECTIFIER

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1N4006 Vishay Siliconix
Vishay Siliconix
  General Purpose Plastic Rectifier

1N4001 thru 1N4007 Vishay General Semiconductor General Purpose Plastic Rectifier DO-204AL (DO-41) PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM (8.3 ms sine-wave) 30 A IFSM (square wave tp = 1 ms) 45 A VF 1.1 V IR 5.0 μA TJ max. 150 °C FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use
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1N4006 TRSYS
TRSYS
  PLASTIC SILICON RECTIFIER

1N4001 THRU 1N4007 PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES l l l l l Low forward voltage drop High current capability High reliability High surge current capability Exceeds environmental standards of MIL-S-19500/228 DO-41 MECHANICAL DATA Case: Molded plastic , DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD-202, method 208 guaranteed Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.3 gram MAXIMUM RATIN
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1N4006 Thinki Semiconductor
Thinki Semiconductor
  (1N4001 - 1N4007) 1.0 Ampere DO-41 Package Silicon Diode

1N4001 thru 1N4007 ® Pb Pb Free Plating Product 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Unit: inch(mm) Features • Low forward voltage drop • High current capability • High surge current capability .034(.86) • Case: Molded plastic, DO-41 • Epoxy: UL 94V-0 rate flame retardant • Lead: Axial leads, solderable per MIL-STD-202 method 208 guaranteed • Polarity: Color band denotes cathode end • Mounting position: Any .205(5.2) .160(4.1) Mechanical Data 1.0(25.4)MIN. .028(.71)
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1N4006 Taiwan Semiconductor
Taiwan Semiconductor
  Silicon Rectifiers

CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 1N4001 thru 1N4007 Taiwan Semiconductor MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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