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Datasheet 25N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 25N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.21Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switch |  Inchange Semiconductor | mosfet |
| 2 | 25N60N | FCH25N60N FCH25N60N — N-Channel SupreMOS® MOSFET
December 2013
FCH25N60N
N-Channel SupreMOS® MOSFET
600 V, 25 A, 126 mΩ Features
• RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Av |  Fairchild Semiconductor | data |
25N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 25N05 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N05
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.065Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switch Inchange Semiconductor mosfet | | |
| 2 | 25N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N06
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.065Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switchi Inchange Semiconductor mosfet | | |
| 3 | 25N06 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 25N06
Preliminary Power MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
DESCRIPTION
The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in  Unisonic Technologies mosfet | | |
| 4 | 25N10 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 25N10
Preliminary Power MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resista Unisonic Technologies mosfet | | |
| 5 | 25N120 | IXGH25N120
VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V
IC25 50 A 50 A
VCE(sat) 3V 4V
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Tra  IXYS Corporation data | | |
| 6 | 25N18 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage
: VDSS= 180V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay Inchange Semiconductor mosfet | | |
| 7 | 25N20 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay Inchange Semiconductor mosfet | |
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