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25N60N даташит ( Datasheet PDF , Даташиты ) |
Номер в каталоге | Описание | Производители | ||
1 | 25N60N | FCH25N60N FCH25N60N — N-Channel SupreMOS® MOSFET
December 2013
FCH25N60N
N-Channel SupreMOS® MOSFET
600 V, 25 A, 126 mΩ Features
• RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) • 100% Avalanche Tested • RoHS Compliant
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it |
![]() Fairchild Semiconductor |
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25N60 даташита ( переписка ) |
Номер в каталоге | Описание | Производители | |
25N60 | N-Channel MOSFET Transistor |
![]() Inchange Semiconductor |
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25N60N | FCH25N60N |
![]() Fairchild Semiconductor |
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