|
2N2369 даташитФункция этой детали – «High-frequency Saturated Switch». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
2N2369 | TAITRON |
High Speed Metal Can Transistor High Speed Metal Can Transistor (NPN)
Features
• High Speed Switching Application • Low Power • RoHS Compliant
Mechanical Data
Case: Terminals:
Weight:
TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams
High Speed Metal Can Transistor (NPN)
2N2369/2N2369A
TO-18
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N2369
2N2369A
VCEO
Collector-Emitter Voltage
15
VCES VCBO
Collector-Emitter Voltage Collector-Base Voltage
40 40
VEBO IC
Emitter-Base Volta |
|
2N2369 | STMicroelectronics |
HIGH-FREQUENCY SATURATED SWITCH 2N2369
HIGH-FREQUENCY SATURATED SWITCH
DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CES V CEO V EBO I CM Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current |
|
2N2369 | Seme LAB |
Bipolar NPN Device 2N2369
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar NPN Device.
VCEO = 40V
IC = 0.2A
All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications
Parameter VCEO* IC(CONT) hFE ft PD
Test Conditions @ |
|
2N2369 | Philips |
NPN switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2369 NPN switching transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification.
handbook, halfpage 1
2N2369
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
DESCRIPTION NPN switching tr |
|
2N2369 | New Jersey Semiconductor |
Trans GP BJT NPN 15V 0.2A 3-Pin TO-18 |
|
2N2369 | NES |
Silicon Small Signal NPN Transistors |
|
2N2369 | Multicomp |
High Speed Switching Transistors 2N2369, 2369A
High Speed Switching Transistors
Features:
• NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power
and High Speed Switching Applications.
TO-18 Metal Can Package
Dimensions Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70
-
L 45°
Dimensions : Mil |
|
2N2369 | Motorola Semiconductors |
Switching Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N2369/D
Switching Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N2369 2N2369A*
*Motorola Preferred Device
3
2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector– Base Voltage Emitter– Base Voltage Collector Current (10 ms pulse) Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Ju |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |