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2N2369 даташит

Функция этой детали – «High-frequency Saturated Switch».



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Номер в каталоге Производители Описание PDF
2N2369 TAITRON
TAITRON
  High Speed Metal Can Transistor

High Speed Metal Can Transistor (NPN) Features • High Speed Switching Application • Low Power • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams High Speed Metal Can Transistor (NPN) 2N2369/2N2369A TO-18 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Volta
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2N2369 STMicroelectronics
STMicroelectronics
  HIGH-FREQUENCY SATURATED SWITCH

2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO I CM Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current
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2N2369 Seme LAB
Seme LAB
  Bipolar NPN Device

2N2369 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 40V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @
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2N2369 Philips
Philips
  NPN switching transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification. handbook, halfpage 1 2N2369 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION NPN switching tr
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2N2369 New Jersey Semiconductor
New Jersey Semiconductor
  Trans GP BJT NPN 15V 0.2A 3-Pin TO-18

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2N2369 NES
NES
  Silicon Small Signal NPN Transistors

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2N2369 Multicomp
Multicomp
  High Speed Switching Transistors

2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45° Dimensions : Mil
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2N2369 Motorola Semiconductors
Motorola Semiconductors
  Switching Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A* *Motorola Preferred Device 3 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector– Base Voltage Emitter– Base Voltage Collector Current (10 ms pulse) Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Ju
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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