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2SA1020 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
9 2SA1020   PNP General Purpose Transistor

2SA1020 PNP 2 1 3 2 3 1 1. EMITTER 2. COLLECTOR 3. BASE TO-92MOD V CEO Value -50 -50 -5 -2,0 1 900 7.25 138 2SA1020=A1020 -10 -50 -0.1 -0.1 u u -40 -5.0 1 WEITRON http://www.weitron.com.tw Free Datasheet http:// 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=-500 mAdc, VCE=-2.0 Vdc) (IC=-1500 mAdc, VCE=-2.0 Vdc) Collector-Emitter Saturation Voltage (IC=-1000 mAdc, IB=-50mAd
Weitron
Weitron
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8 2SA1020   PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.) *Complement to UTC 2SC2655 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE -50 -50 -5 -2 0.5 1 150 -55 ~ +150 UNIT V V V A W W °C °C Collector-Base Voltage VCBO Collector-E
Unisonic Technologies
Unisonic Technologies
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7 2SA1020   TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO
Toshiba Semiconductor
Toshiba Semiconductor
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6 2SA1020   PNP Plastic Encapsulated Transistor

2SA1020 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2A, -50V PNP Plastic Encapsulated Transistor FEATURES  Power amplifier applications N G TO-92MOD H CLASSIFICATION OF hFE(1) Product-Rank Range 2SA1020-O 70-140 2SA1020-Y 120-240  Emitter  Collector  Base M L A J D B K E Collector F C   Base REF. A B C D E F G  Emitter Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J
Secos
Secos
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5 2SA1020   One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE

2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 50 50 5.0 2.0 900 5.0 1.5 12 −55 to +150 Unit Vdc Vd
ON Semiconductor
ON Semiconductor
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4 2SA1020   SILICON PNP TRANSISTOR

2SA1020(3CG1020) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于功率放大,电源开关/Purpose: Power amplifier and switching applications. 特点:饱和压降低,开关时间短,与 2SC2655(3DG2655)互补/Features: Low collector saturation voltage high speed switching time, complementary pair with 2SC2655(3DG2655). 极限参数/Absolute maximum ratings(Ta=25℃) 数值 单位 参数符号 Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5.0 -2.0 900 150 -55~150 V V V A mW ℃ ℃
LZG
LZG
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3 2SA1020   PNP Transistor

2SA1020 TRANSISTOR (PNP) TO-92L 1. EMITTER 2. COLLECTOR FEATURES Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -5 -2 900 150 -55-150 Units V V V A mW ℃ ℃ 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collecto
Koo Chin
Koo Chin
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2 2SA1020   TO-92MOD Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitt
ETC
ETC
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Fairchild Semiconductor
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