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2SC2650 даташит ( Datasheet PDF , Даташиты ) |
| Номер в каталоге | Описание | Производители | ||
| 1 | 2SC2650 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2650
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
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 INCHANGE |
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| 2SC2653H | NPN Transistor |
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| 2SC2656 | TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
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| 2SC2650 | Silicon NPN Power Transistor |
INCHANGE |
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| 2SC2653 | NPN Transistor |
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| 2SC2655 | NPN Plastic Encapsulated Transistor |
 SeCoS |
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| 2SC2655 | NPN General Purpose Transistors |
 Weitron |
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| 2SC2655 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS |
 UTC |
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| 2SC2655 | Silicon NPN Epitaxial Type TRANSISTOR |
 Toshiba Semiconductor |
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На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |