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даташит 2SD1740 IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 2SD1740   NPN Transistor

2SD1740 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON INDUSTRIAL USE POWER SUPPLY Outline Drawings TO-220F17 Features High D.C. current gain High reliability Applications Switching regulators DC-DC converter Solid state relay General purpose power amplifiers JEDEC EIAJ SC-67 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg Rating 150 100 80 6 7 0.2 25 +150 -55 to +150 Unit V V V V A A W
Fuji
Fuji
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2SD даташита ( переписка )

Номер в каталоге Описание Производители PDF
2SD602A

Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor FEATURES z Complementary to 2SB710A PNP Transistor z Low collector to emitter saturation voltage VCE(sat) Pb Lead-free Production specification 2SD602A APPLICATIONS z General purpose amplifier applications SOT-23 ORDERING INFORMATION Typ
Galaxy Microelectronics
Galaxy Microelectronics
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2SD1157

Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High DC Current Gain: hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability APPLICATION
Inchange Semiconductor
Inchange Semiconductor
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2SD1781KFRA

Medium Power Transistor

2SD1781K FRA Medium Power Transistor (32V, 800mA) Parameter VCEO IC Value 32V 800mA lFeatures 1)Very low VCE(sat).   VCE(sat)=0.1V(Typ.)  (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K FRA. lOutline   SOT-346   SC-59 SMT3 lIn
ROHM Semiconductor
ROHM Semiconductor
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2SD1518

Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1518 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching app
Inchange Semiconductor
Inchange Semiconductor
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2SD2115L

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltag
Hitachi Semiconductor
Hitachi Semiconductor
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2SD1126K

Silicon NPN Triple Diffused

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003
Renesas
Renesas
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2SD874A

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm s Features q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 V
Panasonic Semiconductor
Panasonic Semiconductor
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2SD1253

Silicon NPN Triple Diffusion Planar Type

SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1253,2SD1253A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low
Kexin
Kexin
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2SD1806

High-Current Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device
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2SD858A

SI NPN TRIPLE DIFFUSED PLANAR

Panasonic Semiconductor
Panasonic Semiconductor
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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