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Datasheet 2SK3079 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK3079 | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3079
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm l Output Power l Gain : l Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) : ηD = 40% (Min)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC S Drain-Source Voltage Gate- |
 Toshiba Semiconductor |
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| 1 | 2SK3079A | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A
Preliminary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3079A
470 MHz Band Amplifier Applications
Unit: mm Output power: Po = 33.50dBmW (2.2 W) (min) Gain: Gp = 13.50dB (min) Drain Efficiency: ηD = 50.0% (min)
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Maximum Ratings (Ta = 25°C)
Characteristics Dra |
Toshiba Semiconductor |
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