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50N06 даташитФункция этой детали – «N-channel Power Mosfet». |
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Номер в каталоге | Производители | Описание | |
50N06 | Unisonic Technologies |
N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.
TO-220
1
TO-220F
FEATURES
* RDS(ON) = 23mΩ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse trans |
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50N06 | Tuofeng Semiconductor |
Power-Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max SMDversion ID
60 V 15 mΩ 50 A
Type
50N06
50N06
2
Package Marking
1 3
TO-251
50N06
1 23
TO-252 50N06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous |
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50N06 | KIA |
N-CHANNEL MOSFET KIA
50 Amps, 60 Volts N-CHANNEL MOSFET 销售电话:13641469108廖先生 QQ:543158798
50N06
SEMICONDUCTORS
1.Description
The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching
2. Features
RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switchi |
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50N06 | Inchange Semiconductor |
N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
50N06
·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=25℃ 50 A
Ptot Total Dissipation@TC=25℃
150 W
Tj Max. Operating Junction Temperature 150 ℃
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50N06 | ETC |
Low voltage high current power MOS FET 50N06
* '6
72
Available
RoHS*
COMPLIANT
'
* 6
VDS ID VGS PD TJ Tstg EAS
52.4
Ciss Coss Crss
VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ
特性参数值(TC=25ºC)
参数说明 漏源反向电压 漏源截止电流 栅源截止电流
通态电阻
栅源极开启电压 跨导
符号 BVDSS IDSS IGSS(F/R)
RDS(ON)
VGS(th) gFS
测试条件
VGS=0V, ID=250uA
VDS=60v,VGS=0V
VGS=±20V,VDS=0V VGS=10V,ID=26.2A VGS=5V,ID=26.2A VDS=VGS,ID=250µA ID=26.2A,VDS=25V
最小值 60 ---
--
2.0 |
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50N06 | CHONGQING PINGYANG |
N-CHANNEL MOSFET 50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 50N06
ITO-220AB 50N06F
TO-263 50N06B
TO-262 50N06H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche |
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50N06-F | Unisonic Technologies |
N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
50N06-F
Preliminary
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching mode power appliances.
FEATURES
* RDS(ON) < 23mΩ@VGS = 10 V * Fast switching capability * 100% avalanche energy specified * I |
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50N06B | CHONGQING PINGYANG |
N-CHANNEL MOSFET 50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 50N06
ITO-220AB 50N06F
TO-263 50N06B
TO-262 50N06H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |