|
7000 даташитФункция этой детали – «Rocker And Lever Handle Switches». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
7000 | Cannon |
Rocker and Lever Handle Switches Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.co |
Это результат поиска, начинающийся с "7000", "7" |
Номер в каталоге | Производители | Описание | |
2N7000 | Motorola Inc |
60V, 200mA, N-channel MOSFET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
Motorola Preferred Device
MAXIMUM RATINGS
Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Volt |
|
2N7000 | NXP Semiconductors |
60V, 200mA, N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
2N7000 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATU |
|
2N7000 | Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FET Supertex inc.
2N7000
N-Channel Enhancement-Mode Vertical DMOS FETs
Features
►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain di |
|
2N7000 | TRSYS |
N-CHANNEL-ENHANCEMENT |
|
2N7000 | Vishay Siliconix |
N-Channel 60-V (D-S) MOSFET 2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = 10 V 7.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5.5 @ VGS = 10 V 5 @ VGS = 10 V
VGS(th) (V)
0.8 t |
|
2N7000 | Calogic LLC |
N-Channel Enhancement-Mode MOS Transistor N-Channel Enhancement-Mode MOS Transistor
CORPORATION
2N7000 / BS170L
DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is house |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |