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7002 даташит

Функция этой детали – «1.8ghz Three Gain Level Lna».



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Номер в каталоге Производители Описание PDF
7002 STMicroelectronics
STMicroelectronics
  1.8GHz THREE GAIN LEVEL LNA

STB7002 1.8GHz THREE GAIN LEVEL LNA • FULLY INTEGRATED 1.8GHz LNA • THREE GAIN LEVELS (0dB, 18dB, 26dB typ. @ 2.8V) • LOW NOISE FIGURE • TEMPERATURE COMPENSATED APPLICATIONS • DCS HANDSETS ORDER CODE STB7002 MSOP8-EP (exposed pad) BRANDING 7002 DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50% reduction vs
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Это результат поиска, начинающийся с "7002", "7"

Номер в каталоге Производители Описание PDF
2N7002 Pan Jit International Inc.
Pan Jit International Inc.

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel
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2N7002 NXP Semiconductors
NXP Semiconductors

N-channel Trench MOSFET

DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES • Direct interface to C-MOS,
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2N7002 Supertex  Inc
Supertex Inc

N-Channel Enhancement-Mode Vertical DMOS FETs

Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain di
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2N7002 Zetex Semiconductors
Zetex Semiconductors

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO 2N7002 S D PARTMARKING DETAIL – 702 G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage
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2N7002 Calogic  LLC
Calogic LLC

N-Channel Enhancement-Mode MOS Transistor

N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7002 DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdow
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2N7002 Central Semiconductor Corp
Central Semiconductor Corp

N-CHANNEL ENHANCEMENT-MODE MOSFET

2N7002 N-CHANNEL ENHANCEMENT-MODE MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. Mar
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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