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D-GFC00085B-4 даташитФункция этой детали – «Display Module». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
D-GFC00085B-4 | POWERTIP |
Display Module |
Это результат поиска, начинающийся с "D-GF", "D-GFC00085" |
Номер в каталоге | Производители | Описание | |
K6T0808C1D-GF70 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO |
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K6X0808C1D-GF55 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - |
|
K6X0808C1D-GF70 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - |
|
K6X0808T1D-GF70 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
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K6X0808T1D-GF85 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
|
K6X1008C2D-GF55 | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6X1008C2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product. Revised - Added Lead Free 32-SOP-525 Product Revised - Added L |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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