DataSheet26.com


H01N60 даташит

Функция этой детали – «N-channel Power Field Effect Transistor».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
H01N60 HI-SINCERITY
HI-SINCERITY
  N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power
pdf

Это результат поиска, начинающийся с "01N60", "H01"

Номер в каталоге Производители Описание PDF
01N60P Advanced Power Electronics
Advanced Power Electronics

AP01N60P

AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-22
pdf
AP01N60H Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S D BVDSS RDS(ON) ID 60
pdf
AP01N60H-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 1.6A S Descri
pdf
AP01N60H-HF-3 Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP01N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Test Fast Switching Characteristics RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 600V 8Ω 1.6A Description Advanced Power MOSFETs from A
pdf
AP01N60J Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S D BVDSS RDS(ON) ID 60
pdf
AP01N60J-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 1.6A S Descri
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты