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HMP31GP7AFR4C-Y5 даташит

Функция этой детали – «240pin Registered Ddr2 Sdram Dimms Based On 2gb».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
HMP31GP7AFR4C-Y5 Hynix
Hynix
  240pin Registered DDR2 SDRAM DIMMs based on 2Gb

240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb version A based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition. FEATURES • JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V
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Это результат поиска, начинающийся с "31GP7AFR4C", "HMP31GP7AFR4C"

Номер в каталоге Производители Описание PDF
HMP31GP7AFR4C-S5 Hynix
Hynix

240pin Registered DDR2 SDRAM DIMMs based on 2Gb

240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb version A based Registered DDR2
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HMP31GP7AFR4C-S6 Hynix
Hynix

240pin Registered DDR2 SDRAM DIMMs based on 2Gb

240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb version A based Registered DDR2
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1N3174 Microsemi Corporation
Microsemi Corporation

(1N3161 - 1N3177) SILICON POWER RECTIFIER

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1N3174 New Jersey Semiconductor
New Jersey Semiconductor

Diode Switching 1KV 300A 2-Pin DO-9

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2N3174 Inchange Semiconductor
Inchange Semiconductor

Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3174 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliabl
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2N3174 Seme LAB
Seme LAB

Bipolar PNP Device

2N3174 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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