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J112 даташит

Функция этой детали – «N-channel Switch».



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Номер в каталоге Производители Описание PDF
J112 Vishay
Vishay
  N-Channel JFETs

J/SST111 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) J/SST111 J/SST112 J/SST113 –3 to –10 –1 to –5 v–3 30 50 100 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 J111 SST111 J112 SST112 J113 SST113 FEATURES D Low On-Resistance: 111 < 30 W D Fast Switching—tON: 4 ns D Low Leakage: 5 pA D Low Capacitance: 3 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good
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J112 ON Semiconductor
ON Semiconductor
  (J111 / J112) JFET Chopper Transistors N-Channel

J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value −35 −35 50 350 2.8 300 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE Maximum ratings are those
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J112 NXP Semiconductors
NXP Semiconductors
  N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections
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J112 New Jersey Semiconductor
New Jersey Semiconductor
  Trans JFET N-CH 3-Pin TO-92 Bulk

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J112 Motorola  Inc
Motorola Inc
  JFET Chopper Transistor (N-Channel- Depletion)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN 3 GATE J112 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value – 35 – 35 50 350 2.8 300 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2
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J112 Micross
Micross
  Switching

J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J112  LOW GATE LEAKAGE CURRENT  5pA  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise note
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J112 Micro Electronics
Micro Electronics
  N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

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J112 Linear Integrated Systems
Linear Integrated Systems
  SINGLE N-CHANNEL JFET

J/SST111 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C D S G 1 2 3 TO 92 SINGLE N
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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