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J113 даташит

Функция этой детали – «N-channel Switch».



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Номер в каталоге Производители Описание PDF
J113 Vishay
Vishay
  N-Channel JFETs

J/SST111 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) J/SST111 J/SST112 J/SST113 –3 to –10 –1 to –5 v–3 30 50 100 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 J111 SST111 J112 SST112 J113 SST113 FEATURES D Low On-Resistance: 111 < 30 W D Fast Switching—tON: 4 ns D Low Leakage: 5 pA D Low Capacitance: 3 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good
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J113 ON Semiconductor
ON Semiconductor
  JFET Chopper Transistors

ON Semiconductort JFET Chopper Transistors N–Channel — Depletion 3 GATE 1 DRAIN MAXIMUM RATINGS Rating Drain–Gate Voltage Gate–Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg 2 SOURCE Value Unit –35 Vdc –35 Vdc 50 mAdc 350 mW 2.8 mW/°C 300 –65 to +150 °C °C J111 J112 J113 1 2 3 CASE 29–11, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA =
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J113 NXP Semiconductors
NXP Semiconductors
  N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections
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J113 New Jersey Semiconductor
New Jersey Semiconductor
  Trans JFET N-CH 3-Pin TO-92 Bulk

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J113 Motorola Semiconductors
Motorola Semiconductors
  JFET CHOPPER

Jill J112 J113 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET CHOPPER —N-CHANNEL DEPLETION MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/ = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG Vgs 'G PD tl TJ- T stg Value -35 -35 50 625 5.68 300 - 55 to + 1 50 Unit Vdc Vdc mA mW mW/°C °C °C ELECTRICAL CHARACTERISTICS
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J113 Micross
Micross
  Switching

J113 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J113 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J113  LOW GATE LEAKAGE CURRENT  5pA  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise note
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J113 Micro Electronics
Micro Electronics
  N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

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J113 Linear Integrated Systems
Linear Integrated Systems
  SINGLE N-CHANNEL JFET

J/SST111 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C D S G 1 2 3 TO 92 SINGLE N
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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