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J113 даташитФункция этой детали – «N-channel Switch». |
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Номер в каталоге | Производители | Описание | |
J113 | Vishay |
N-Channel JFETs J/SST111 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)
J/SST111 J/SST112 J/SST113
–3 to –10 –1 to –5
v–3
30 50 100
ID(off) Typ (pA)
5 5 5
tON Typ (ns)
4 4 4
J111 SST111 J112 SST112 J113 SST113
FEATURES
D Low On-Resistance: 111 < 30 W D Fast Switching—tON: 4 ns D Low Leakage: 5 pA D Low Capacitance: 3 pF D Low Insertion Loss
BENEFITS
D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good |
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J113 | ON Semiconductor |
JFET Chopper Transistors ON Semiconductort
JFET Chopper Transistors
N–Channel — Depletion
3 GATE
1 DRAIN
MAXIMUM RATINGS Rating
Drain–Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
Lead Temperature
Operating and Storage Junction Temperature Range
Symbol VDG VGS IG PD
TL TJ, Tstg
2 SOURCE
Value
Unit
–35 Vdc
–35 Vdc
50 mAdc
350 mW 2.8 mW/°C
300 –65 to +150
°C °C
J111 J112 J113
1 2 3
CASE 29–11, STYLE 5 TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = |
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J113 | NXP Semiconductors |
N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DATA SHEET
J111; J112; J113 N-channel silicon field-effect transistors
Product specification File under Discrete Semiconductors, SC07 July 1993
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections |
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J113 | New Jersey Semiconductor |
Trans JFET N-CH 3-Pin TO-92 Bulk |
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J113 | Motorola Semiconductors |
JFET CHOPPER Jill J112 J113
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET
CHOPPER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation T/ = 25°C
Derate above 25°C
Lead Temperature Operating and Storage Junction
Temperature Range
Symbol VDG Vgs
'G
PD
tl TJ- T stg
Value -35 -35
50 625 5.68 300 - 55 to + 1 50
Unit
Vdc Vdc
mA
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS |
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J113 | Micross |
Switching J113 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J113
This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J113 LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise note |
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J113 | Micro Electronics |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS |
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J113 | Linear Integrated Systems |
SINGLE N-CHANNEL JFET J/SST111 SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C
D S G 1 2 3 TO 92
SINGLE N |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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