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M01N60 даташитФункция этой детали – «N Channel Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M01N60 | ETC |
N Channel MOSFET N Channel MOSFET 1.0A
M01N60
PIN CONFIGURATION
TO-251 TO-252
FEATURE
Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature
1.Gate 2.Drain 3.Source
ABSOLUTE MAXIMUM RATINGS
RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temp |
Это результат поиска, начинающийся с "01N60", "M01" |
Номер в каталоге | Производители | Описание | |
01N60P | Advanced Power Electronics |
AP01N60P
AP01N60P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G D S
BVDSS RDS(ON) ID TO-22 |
|
AP01N60H | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01N60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G S D
BVDSS RDS(ON) ID
60 |
|
AP01N60H-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP01N60H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
600V 8Ω 1.6A
S
Descri |
|
AP01N60H-HF-3 | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP01N60H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement 100% Avalanche Test Fast Switching Characteristics RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
600V 8Ω 1.6A
Description
Advanced Power MOSFETs from A |
|
AP01N60J | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01N60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G S D
BVDSS RDS(ON) ID
60 |
|
AP01N60J-HF | Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP01N60H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
600V 8Ω 1.6A
S
Descri |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |