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M01N60 даташит

Функция этой детали – «N Channel Mosfet».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
M01N60 ETC
ETC
  N Channel MOSFET

N Channel MOSFET 1.0A M01N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temp
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Это результат поиска, начинающийся с "01N60", "M01"

Номер в каталоге Производители Описание PDF
01N60P Advanced Power Electronics
Advanced Power Electronics

AP01N60P

AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-22
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AP01N60H Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S D BVDSS RDS(ON) ID 60
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AP01N60H-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 1.6A S Descri
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AP01N60H-HF-3 Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP01N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Test Fast Switching Characteristics RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 600V 8Ω 1.6A Description Advanced Power MOSFETs from A
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AP01N60J Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S D BVDSS RDS(ON) ID 60
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AP01N60J-HF Advanced Power Electronics
Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 1.6A S Descri
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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