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M2115 даташитФункция этой детали – «Dual Operational Amplifier». |
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Номер в каталоге | Производители | Описание | |
M2115 | Unisonic Technologies |
DUAL OPERATIONAL AMPLIFIER UNISONIC TECHNOLOGIES CO., LTD
M2115
LINEAR INTEGRATED CIRCUIT
DUAL OPERATIONAL AMPLIFIER
DESCRIPTION
The UTC M2115 is a low operating Voltage(±1.0V min.) and low saturation output voltage(±2.0V p-p at supply voltage ±2.5V) operational amplifier. It is applicable to handy type CD,radio cassete CD, and portable DAT, that are digital audio apparatus which require the 5V single supply operation and high output voltage. The UTC M2115 is improved version of the UTC M2100 about BIAS-CIRCUIT. So the UTC M2115 is low |
Это результат поиска, начинающийся с "2115", "M2" |
Номер в каталоге | Производители | Описание | |
21PT2115 | Philips |
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IMPORTANT
Before you begin:
Make sure your package includes the following items |
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2SD2115 | Hitachi Semiconductor |
Silicon NPN Epitaxial Planar(Low frequency power amplifier) 2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltag |
|
2SD2115L | Hitachi Semiconductor |
Silicon NPN Epitaxial Planar(Low frequency power amplifier) 2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltag |
|
2SD2115S | Hitachi Semiconductor |
Silicon NPN Epitaxial Planar(Low frequency power amplifier) 2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltag |
|
2SK2115 | Inchange Semiconductor |
N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·High speed power switching
isc Product Specification
2SK2115
APPLICATIONS ·Suitable for Switching regulator
ABSOLUTE MAXIMUM RATI |
|
2SK2115 | Hitachi Semiconductor |
Silicon N-Channel MOS FET 2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator
Outline
TO-220CFM
D 12 3 1. Gate
G 2. Drain 3. Source
S
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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