DataSheet26.com


M2115 даташит

Функция этой детали – «Dual Operational Amplifier».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
M2115 Unisonic Technologies
Unisonic Technologies
  DUAL OPERATIONAL AMPLIFIER

UNISONIC TECHNOLOGIES CO., LTD M2115 LINEAR INTEGRATED CIRCUIT DUAL OPERATIONAL AMPLIFIER  DESCRIPTION The UTC M2115 is a low operating Voltage(±1.0V min.) and low saturation output voltage(±2.0V p-p at supply voltage ±2.5V) operational amplifier. It is applicable to handy type CD,radio cassete CD, and portable DAT, that are digital audio apparatus which require the 5V single supply operation and high output voltage. The UTC M2115 is improved version of the UTC M2100 about BIAS-CIRCUIT. So the UTC M2115 is low
pdf

Это результат поиска, начинающийся с "2115", "M2"

Номер в каталоге Производители Описание PDF
21PT2115 Philips
Philips

(21PTxxxx) Color TV Operating Instruction

w w a D . w S a t e e h U 4 t m o .c 21PT3324 w w w t a .D S a e h U 4 t e .c m o 3139 125 34801 cover new english 1 1/10/05, 11:14 AM w w w .D a S a t e e h U 4 t m o .c IMPORTANT Before you begin: Make sure your package includes the following items
pdf
2SD2115 Hitachi Semiconductor
Hitachi Semiconductor

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltag
pdf
2SD2115L Hitachi Semiconductor
Hitachi Semiconductor

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltag
pdf
2SD2115S Hitachi Semiconductor
Hitachi Semiconductor

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltag
pdf
2SK2115 Inchange Semiconductor
Inchange Semiconductor

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·High speed power switching isc Product Specification 2SK2115 APPLICATIONS ·Suitable for Switching regulator ABSOLUTE MAXIMUM RATI
pdf
2SK2115 Hitachi Semiconductor
Hitachi Semiconductor

Silicon N-Channel MOS FET

2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты