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M27C405-70N6TR даташитФункция этой детали – «4 Mbit 512kb X 8 Otp Eprom». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M27C405-70N6TR | STMicroelectronics |
4 Mbit 512Kb x 8 OTP EPROM M27C405
4 Mbit (512Kb x 8) OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES – Typical 48sec. (PRESTO II Algorithm) – Typical 27sec. (On-Board Programming) ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: B4
32
1
PDIP32 (B)
PLCC32 (K)
TSOP32 (N) 8 x 20mm
DESCRIPTION The M27C4 |
Это результат поиска, начинающийся с "27C405", "M27C405-70N" |
Номер в каталоге | Производители | Описание | |
M27C405 | STMicroelectronics |
4 Mbit 512Kb x 8 OTP EPROM M27C405
4 Mbit (512Kb x 8) OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25 |
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M27C405-100B1TR | STMicroelectronics |
4 Mbit 512Kb x 8 OTP EPROM M27C405
4 Mbit (512Kb x 8) OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25 |
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M27C405-100B6TR | STMicroelectronics |
4 Mbit 512Kb x 8 OTP EPROM M27C405
4 Mbit (512Kb x 8) OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25 |
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M27C405-100K1TR | STMicroelectronics |
4 Mbit 512Kb x 8 OTP EPROM M27C405
4 Mbit (512Kb x 8) OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25 |
|
M27C405-100K6TR | STMicroelectronics |
4 Mbit 512Kb x 8 OTP EPROM M27C405
4 Mbit (512Kb x 8) OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25 |
|
M27C405-100N1TR | STMicroelectronics |
4 Mbit 512Kb x 8 OTP EPROM M27C405
4 Mbit (512Kb x 8) OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |