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M27C801-70K1TR даташитФункция этой детали – «8 Mbit 1mb X 8 Uv Eprom And». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M27C801-70K1TR | STMicroelectronics |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA
1 32
s s
32
1
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 42h
FDIP32W (F)
PDIP32 (B)
DESCRIPTION The M27C801 is an 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suite |
Это результат поиска, начинающийся с "27C801", "M27C801-70K" |
Номер в каталоге | Производители | Описание | |
27C801 | STMicroelectronics |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA
1 32
s s
32
1
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 50µs/ |
|
M27C801 | STMicroelectronics |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA
1 32
s s
32
1
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 50µs/ |
|
M27C801-100B | STMicroelectronics |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA
1 32
s s
32
1
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 50µs/ |
|
M27C801-100B1TR | STMicroelectronics |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA
1 32
s s
32
1
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 50µs/ |
|
M27C801-100B1X | STMicroelectronics |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA
1 32
s s
32
1
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 50µs/ |
|
M27C801-100B6TR | STMicroelectronics |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM M27C801
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA
1 32
s s
32
1
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 50µs/ |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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