DataSheet26.com


M27V160-100M6TR даташит

Функция этой детали – «16 Mbit 2mb X8 Or 1mb X16 Low».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
M27V160-100M6TR STMicroelectronics
STMicroelectronics
  16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA 1 1 42 44 s s s s FDIP42W (F) SO44 (M) s s s PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE 42 – Manufacturer Code: 20h – Device Code: B1h DESCRIPTION The M27V160 is a low voltage 16 Mbit EPROM of
pdf

Это результат поиска, начинающийся с "27V160", "M27V160-100M"

Номер в каталоге Производители Описание PDF
M27V160 STMicroelectronics
STMicroelectronics

16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA 1
pdf
M27V160-100B1TR STMicroelectronics
STMicroelectronics

16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA 1
pdf
M27V160-100B6TR STMicroelectronics
STMicroelectronics

16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA 1
pdf
M27V160-100F1TR STMicroelectronics
STMicroelectronics

16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA 1
pdf
M27V160-100F6TR STMicroelectronics
STMicroelectronics

16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA 1
pdf
M27V160-100M1TR STMicroelectronics
STMicroelectronics

16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160 16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM s 3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA 1
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты