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M27V160-150XM6TR даташитФункция этой детали – «16 Mbit 2mb X8 Or 1mb X16 Low». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M27V160-150XM6TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 1 42 44
s s
s s
FDIP42W (F)
SO44 (M)
s s s
PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE
42
– Manufacturer Code: 20h – Device Code: B1h DESCRIPTION The M27V160 is a low voltage 16 Mbit EPROM of |
Это результат поиска, начинающийся с "27V160", "M27V160-150XM" |
Номер в каталоге | Производители | Описание | |
M27V160 | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100B1TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100B6TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100F1TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100F6TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100M1TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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