|
M27V160-200XM6TR даташитФункция этой детали – «16 Mbit 2mb X8 Or 1mb X16 Low». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M27V160-200XM6TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V201
2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM
s
LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz – Standby Current 20µA
32 32
s s
s s s
PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical) ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 61h
1
1
FDIP32W (F)
PDIP32 (B)
DESCRIPTION The M27V201 is a low voltage 2 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one ti |
Это результат поиска, начинающийся с "27V160", "M27V160-200XM" |
Номер в каталоге | Производители | Описание | |
M27V160 | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100B1TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100B6TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100F1TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100F6TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
|
M27V160-100M1TR | STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM M27V160
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
s
3V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 60µA
1 |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |