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M27V320-150M6 даташитФункция этой детали – «32 Mbit 4mb X8 Or 2mb X16 Otp». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M27V320-150M6 | STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA
SO44 (M) TSOP48 (N) 12 x 20 mm
s s
s s
s s s
PROGRAMMING VOLTAGE: 12V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE: – Manufacturer Code 20h – Device Code: 32h Figure 1. Logic Diagram
DESCRIPTION The M27V320 is a low voltage 32 Mbit EPROM offere |
Это результат поиска, начинающийся с "27V320", "M27V320-15" |
Номер в каталоге | Производители | Описание | |
M27V320 | STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA
SO44 (M) TSOP48 (N) 12 |
|
M27V320-100M1 | STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA
SO44 (M) TSOP48 (N) 12 |
|
M27V320-100M6 | STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA
SO44 (M) TSOP48 (N) 12 |
|
M27V320-100N1 | STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA
SO44 (M) TSOP48 (N) 12 |
|
M27V320-100N6 | STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA
SO44 (M) TSOP48 (N) 12 |
|
M27V320-120M1 | STMicroelectronics |
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM M27V320
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
s
3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA
SO44 (M) TSOP48 (N) 12 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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