DataSheet26.com


M27V800-100XF1TR даташит

Функция этой детали – «8 Mbit 1mb X8 Or 512kb X16 Low».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
M27V800-100XF1TR STMicroelectronics
STMicroelectronics
  8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM

M27V800 8 Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT 1 1 42 42 s s s s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 20µA FDIP42W (F) PDIP42 (B) s s s PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical) ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code: 00B2h 1 44 SO44 (M) PLCC44 (K) DESCRIPTION
pdf

Это результат поиска, начинающийся с "27V800", "M27V800-100XF"

Номер в каталоге Производители Описание PDF
M27V800 STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM

M27V800 8 Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT 1 1 42 42 s s s s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz �
pdf
M27V800-100B1TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM

M27V800 8 Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT 1 1 42 42 s s s s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz �
pdf
M27V800-100F1TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM

M27V800 8 Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT 1 1 42 42 s s s s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz �
pdf
M27V800-100K1TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM

M27V800 8 Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT 1 1 42 42 s s s s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz �
pdf
M27V800-100M1TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM

M27V800 8 Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT 1 1 42 42 s s s s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz �
pdf
M27V800-100XB1TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM

M27V800 8 Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT 1 1 42 42 s s s s LOW POWER CONSUMPTION – Active Current 30mA at 8MHz �
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты