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M27W016-100B1T даташитФункция этой детали – «16 Mbit 1mb X16 3v Supply Flexiblerom Memory». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M27W016-100B1T | STMicroelectronics |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory M27W016
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory
FEATURES SUMMARY s ONE TIME PROGRAMMABLE
s
Figure 1. Packages
SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
s
ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to 3.6V PROGRAMMING TIME – 9µs per Word typical – Multiple Word Programming Option (2s typical Chip Program)
SO44 (M) TSOP48 (N) 12 x 20mm
s
s s
SUITABLE FOR ON-BOARD PROGRAMMING PROGRAM CONTROLLER – Embedded Word Program algorithms
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Это результат поиска, начинающийся с "27W016", "M27W016-100" |
Номер в каталоге | Производители | Описание | |
M27W016 | STMicroelectronics |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory M27W016
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory
FEATURES SUMMARY s ONE TIME PROGRAMMABLE
s
Figure 1. Packages
SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
s
ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to |
|
M27W016-100M1T | STMicroelectronics |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory M27W016
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory
FEATURES SUMMARY s ONE TIME PROGRAMMABLE
s
Figure 1. Packages
SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
s
ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to |
|
M27W016-100N1T | STMicroelectronics |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory M27W016
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory
FEATURES SUMMARY s ONE TIME PROGRAMMABLE
s
Figure 1. Packages
SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
s
ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to |
|
M27W016-100S1T | STMicroelectronics |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory M27W016
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory
FEATURES SUMMARY s ONE TIME PROGRAMMABLE
s
Figure 1. Packages
SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
s
ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to |
|
M27W016-110B1T | STMicroelectronics |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory M27W016
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory
FEATURES SUMMARY s ONE TIME PROGRAMMABLE
s
Figure 1. Packages
SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
s
ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to |
|
M27W016-110M1T | STMicroelectronics |
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory M27W016
16 Mbit (1Mb x16) 3V Supply FlexibleROM™ Memory
FEATURES SUMMARY s ONE TIME PROGRAMMABLE
s
Figure 1. Packages
SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
s
ACCESS TIME – 90ns at VCC = 3.0 to 3.6V – 100, 110ns at VCC = 2.7 to |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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