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M27W400-120XB6TR даташит

Функция этой детали – «4 Mbit 512kb X8 Or 256kb X16 Low».



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Номер в каталоге Производители Описание PDF
M27W400-120XB6TR STMicroelectronics
STMicroelectronics
  4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V 40 40 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 20mA at 8MHz – Stand-by Current 15µA 1 1 FDIP40W (F) PDIP40 (B) s s s s s PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device C
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Это результат поиска, начинающийся с "27W400", "M27W400-120XB"

Номер в каталоге Производители Описание PDF
M27W400 STMicroelectronics
STMicroelectronics

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V 40 40 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW P
pdf
M27W400-100B6TR STMicroelectronics
STMicroelectronics

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V 40 40 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW P
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M27W400-100F6TR STMicroelectronics
STMicroelectronics

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V 40 40 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW P
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M27W400-100K6TR STMicroelectronics
STMicroelectronics

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V 40 40 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW P
pdf
M27W400-100XB6TR STMicroelectronics
STMicroelectronics

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V 40 40 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW P
pdf
M27W400-100XF6TR STMicroelectronics
STMicroelectronics

4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V 40 40 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW P
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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