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M27W800-150B6TR даташитФункция этой детали – «8 Mbit 1mb X 8 Or 512kb X». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M27W800-150B6TR | STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM M27W800
8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V
42 42
s
s
BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 15µA
1
1
FDIP42W (F)
PDIP42 (B)
s s
s s s
PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code |
Это результат поиска, начинающийся с "27W800", "M27W800-150B" |
Номер в каталоге | Производители | Описание | |
M27W800 | STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM M27W800
8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V
42 42
s
s
BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW |
|
M27W800-100B6TR | STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM M27W800
8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V
42 42
s
s
BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW |
|
M27W800-100F6TR | STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM M27W800
8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V
42 42
s
s
BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW |
|
M27W800-100K6TR | STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM M27W800
8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V
42 42
s
s
BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW |
|
M27W800-120B6TR | STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM M27W800
8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V
42 42
s
s
BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW |
|
M27W800-120F6TR | STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM M27W800
8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM
s
2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V
42 42
s
s
BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |