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M28C64 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
3 M28C64   64 Kbit (8K x 8) Parallel EEPROM

M28C64 64 Kbit (8K x 8) Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN s Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64-A – 120 ns at VCC=3 V for M28C64-xxW s Single Supply Voltage: – 4.5 V to 5.5 V for M28C64 and M28C64-A – 2.7 V to 3.6 V for M28C64-xxW s Low Power Consumption s Fast BYTE and PAGE WRITE (up to 64 Bytes) – 1 ms at VCC=4.5 V for M28C64-A – 3 ms at VCC=4.5 V for M28C64 – 5 ms at VCC=2.7 V for M28C64-xxW s Enhanced Write Detection and Monitoring: – Ready/Busy
STMicroelectronics
STMicroelectronics
pdf
2 M28C64C   64 Kbit (8Kb x8) Parallel EEPROM

M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output (for M28C64C product only) – Data Polling – Toggle Bit PAGE LOAD TIMER STATUS BIT HIGH RELIABILITY SINGLE POLYSILICON, CMOS TECHNOLOGY – Endurance >100,000 Erase/Write Cycles – Data Retention >40 Years JEDEC APPROVED BYTEWIDE PIN OUT 28 1
STMicroelectronics
STMicroelectronics
pdf
1 M28C64X   64 Kbit (8Kb x8) Parallel EEPROM

M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output (for M28C64C product only) – Data Polling – Toggle Bit PAGE LOAD TIMER STATUS BIT HIGH RELIABILITY SINGLE POLYSILICON, CMOS TECHNOLOGY – Endurance >100,000 Erase/Write Cycles – Data Retention >40 Years JEDEC APPROVED BYTEWIDE PIN OUT 28 1
STMicroelectronics
STMicroelectronics
pdf



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Номер в каталоге Описание Производители PDF
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Fairchild Semiconductor
Fairchild Semiconductor
pdf
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HYDIS
HYDIS
pdf

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