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M28F010 даташитФункция этой детали – «1024k (128k X 8) Cmos Flash Memory». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M28F010 | Intel Corporation |
1024K (128K x 8) CMOS FLASH MEMORY M28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Y
Y
Y
Y
Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption 30 mA Maximum Active Current 100 mA Maximum Standby Current Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing
Y
Y
Y Y
ETO |
Это результат поиска, начинающийся с "28F010", "M28F" |
Номер в каталоге | Производители | Описание | |
28F010 | Intel |
1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS |
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28F010 | Catalyst Semiconductor |
Search ----- CAT28F010 CAT28F010
1 Megabit CMOS Flash Memory Licensed Intel second source FEATURES
I Fast read access time: 90/120 ns I Low power CMOS dissipation:
H
GEN FR ALO
EE
LE
A D F R E ETM
I Commercial, industrial and automotive
temperature ranges
I On-chip address and data latches I JED |
|
A28F010 | Intel Corporation |
1024K (128K x 8) CMOS FLASH MEMORY A28F010 1024K (128K x 8) CMOS FLASH MEMORY
(Automotive)
Y
Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles M |
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AM28F010 | Advanced Micro Devices |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F010
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention p |
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AM28F010A | Advanced Micro Devices |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms FINAL
Am28F010A
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby c |
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AM28F010A-120EC | Advanced Micro Devices |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms FINAL
Am28F010A
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby c |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |