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M28F010 даташит

Функция этой детали – «1024k (128k X 8) Cmos Flash Memory».



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Номер в каталоге Производители Описание PDF
M28F010 Intel Corporation
Intel Corporation
  1024K (128K x 8) CMOS FLASH MEMORY

M28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption 30 mA Maximum Active Current 100 mA Maximum Standby Current Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y Y Y Y ETO
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Это результат поиска, начинающийся с "28F010", "M28F"

Номер в каталоге Производители Описание PDF
28F010 Intel
Intel

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS
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28F010 Catalyst Semiconductor
Catalyst Semiconductor

Search ----- CAT28F010

CAT28F010 1 Megabit CMOS Flash Memory Licensed Intel second source FEATURES I Fast read access time: 90/120 ns I Low power CMOS dissipation: H GEN FR ALO EE LE A D F R E ETM I Commercial, industrial and automotive temperature ranges I On-chip address and data latches I JED
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A28F010 Intel Corporation
Intel Corporation

1024K (128K x 8) CMOS FLASH MEMORY

A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles M
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AM28F010 Advanced Micro Devices
Advanced Micro Devices

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory

FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention p
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AM28F010A Advanced Micro Devices
Advanced Micro Devices

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms

FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby c
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AM28F010A-120EC Advanced Micro Devices
Advanced Micro Devices

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms

FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby c
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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