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M28LV64 даташитФункция этой детали – «64k (8k X 8) Low Voltage Parallel Eeprom». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M28LV64 | STMicroelectronics |
64K (8K x 8) LOW VOLTAGE PARALLEL EEPROM M28LV64
64K (8K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION
FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max
ENHANCED END OF WRITE DETECTION: – Ready/Busy Open Drain Output
(only on the M28LV64) – Data Polling – Toggle Bit PAGE LOAD TIMER STATUS BIT HIGH RELIABILITY SINGLE POLYSILICON, CMOS TECHNOLOGY: – Endurance >100,000 Erase/Write Cycles – Data Retention >40 Years JEDEC A |
Это результат поиска, начинающийся с "28LV64", "M28L" |
Номер в каталоге | Производители | Описание | |
28LV64 | Catalyst |
64K-Bit CMOS PARALLEL EEPROM CAT28LV64
64K-Bit CMOS PARALLEL EEPROM FEATURES
■ 3.0V to 3.6 V Supply ■ Read access times: ■ CMOS and TTL compatible I/O ■ Automatic page write operation:
H
GEN FR ALO
EE
LE
A D F R E ETM
– 150/200/250ns
■ Low power CMOS dissipation:
– 1 to 32 bytes in 5ms |
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28LV64A | Microchip Technology |
64K (8K x 8) Low Voltage CMOS EEPROM 28LV64A
64K (8K x 8) Low Voltage CMOS EEPROM
FEATURES
• 2.7V to 3.6V Supply • Read Access Time—300 ns • CMOS Technology for Low Power Dissipation - 8 mA Active - 50 µA CMOS Standby Current • Byte Write Time—3 ms • Data Retention >200 years • High Endurance - Mini |
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AT28LV64B | ATMEL Corporation |
64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection AT28LV64B
Features
• • • • • • • • • • •
Single 3.3V ± 10% Supply 3-Volt-Only Read and Write Operation Software-Protected Programming Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current Fast Read Access Time − 200 ns Automatic Page Wr |
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CAT28LV64 | Catalyst Semiconductor |
64K-Bit CMOS PARALLEL E2PROM Preliminary
CAT28LV64
64K-Bit CMOS PARALLEL E2PROM FEATURES
s 3.0V to 3.6 V Supply s Read Access Times: s CMOS and TTL Compatible I/O s Automatic Page Write Operation:
– 250/300/350ns
s Low Power CMOS Dissipation:
– 1 to 32 Bytes in 5ms – Page Load Timer
s End of Write D |
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CAT28LV64 | Catalyst Semiconductor |
64K-Bit CMOS PARALLEL EEPROM Preliminary
CAT28LV64
64K-Bit CMOS PARALLEL E2PROM FEATURES
s 3.0V to 3.6 V Supply s Read Access Times: s CMOS and TTL Compatible I/O s Automatic Page Write Operation:
– 250/300/350ns
s Low Power CMOS Dissipation:
– 1 to 32 Bytes in 5ms – Page Load Timer
s End of Write D |
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CAT28LV64G-15T | Catalyst Semiconductor |
64K-Bit CMOS PARALLEL EEPROM CAT28LV64
64K-Bit CMOS PARALLEL EEPROM FEATURES
■ 3.0V to 3.6 V Supply ■ Read access times: ■ CMOS and TTL compatible I/O ■ Automatic page write operation:
H
GEN FR ALO
EE
LE
A D F R E ETM
– 150/200/250ns
■ Low power CMOS dissipation:
– 1 to 32 bytes in 5ms |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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