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M28W640FCT даташит

Функция этой детали – «(m28w640fct / M28w640fcb) Flash Memory».



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Номер в каталоге Производители Описание PDF
M28W640FCT ST Microelectronics
ST Microelectronics
  (M28W640FCT / M28W640FCB) Flash memory

M28W640FCT M28W640FCB 64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory Feature summary ■ Supply voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) Access times: 70, 85, 90,100ns Programming time: – 10µs typical – Double Word Programming Option – Quadruple Word Programming Option Common Flash Interface Memory blocks – Parameter Blocks (Top or Bottom location) – Main Blocks Block locking – All blocks lo
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Это результат поиска, начинающийся с "28W640FCT", "M28W640"

Номер в каталоге Производители Описание PDF
HG1286401C-VA HTDisplay
HTDisplay

Graphic LCD module

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M28W640CB STMicroelectronics
STMicroelectronics

64 Mbit 3V Supply Flash Memory

FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME – 3.0V to 3.6V: 80ns – 2.7V to 3.6V: 90ns s PROGRAMMING TIME: – 10µs typical – Double Word Programm
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M28W640CT STMicroelectronics
STMicroelectronics

64 Mbit 3V Supply Flash Memory

FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME – 3.0V to 3.6V: 80ns – 2.7V to 3.6V: 90ns s PROGRAMMING TIME: – 10µs typical – Double Word Programm
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M28W640ECB STMicroelectronics
STMicroelectronics

64 Mbit 3V Supply Flash Memory

FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option – Quadruple Wor
pdf
M28W640ECT STMicroelectronics
STMicroelectronics

64 Mbit 3V Supply Flash Memory

FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option – Quadruple Wor
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M28W640FCB ST Microelectronics
ST Microelectronics

(M28W640FCT / M28W640FCB) Flash memory

M28W640FCT M28W640FCB 64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory Feature summary ■ Supply voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) Access times: 70, 85, 90,
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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