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M28W640FCT даташитФункция этой детали – «(m28w640fct / M28w640fcb) Flash Memory». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
M28W640FCT | ST Microelectronics |
(M28W640FCT / M28W640FCB) Flash memory
M28W640FCT M28W640FCB
64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory
Feature summary
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Supply voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) Access times: 70, 85, 90,100ns Programming time: – 10µs typical – Double Word Programming Option – Quadruple Word Programming Option Common Flash Interface Memory blocks – Parameter Blocks (Top or Bottom location) – Main Blocks Block locking – All blocks lo |
Это результат поиска, начинающийся с "28W640FCT", "M28W640" |
Номер в каталоге | Производители | Описание | |
HG1286401C-VA | HTDisplay |
Graphic LCD module |
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M28W640CB | STMicroelectronics |
64 Mbit 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME – 3.0V to 3.6V: 80ns – 2.7V to 3.6V: 90ns s PROGRAMMING TIME: – 10µs typical – Double Word Programm |
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M28W640CT | STMicroelectronics |
64 Mbit 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.3V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME – 3.0V to 3.6V: 80ns – 2.7V to 3.6V: 90ns s PROGRAMMING TIME: – 10µs typical – Double Word Programm |
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M28W640ECB | STMicroelectronics |
64 Mbit 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option – Quadruple Wor |
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M28W640ECT | STMicroelectronics |
64 Mbit 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option – Quadruple Wor |
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M28W640FCB | ST Microelectronics |
(M28W640FCT / M28W640FCB) Flash memory
M28W640FCT M28W640FCB
64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory
Feature summary
■
Supply voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) Access times: 70, 85, 90, |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |